Transfer Characteristic of Zinc Nitride Based Thin Film Transistors

AuthID
 P-002-G3C
4
Author(s)
Bhattacharyya, SR
·
Pinnisch, M
·
3
Editor(s)
Parbrook, PJ; Martin, RW; Halsall, MP
Document Type
Proceedings Paper
Year published
2012
Published
in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1862-6351
Volume: 9, Issue: 3-4, Pages: 469-472 (4)
Conference
9Th International Conference on Nitride Semiconductors (Icns), Date: JUL 10-15, 2011, Location: Glasgow, SCOTLAND, Sponsors: AIXTRON, AkzoNobel, LG Elect, OSRAM Opto Semicond, CREE, LAYTEC In-situ Sensors, Philips Lumileds, Veeco, Glengoyne
Indexing
Wos®
Scopus®
Crossref®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-84858838054
Wos: WOS:000306521600010
Source Identifiers
ISSN: 1862-6351
Export Publication Metadata
Marked List
 Add to Marked List
Citations
Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

CORE Conference
No information about CORE Rank

During the preprocessing phase, only publications of type 'Proceedings Paper' or 'Proceedings' are automatically processed to identify their CORE Rank.

TIP: If your publication's CORE Rank is missing, you can contact with your institutional manager to have the correct ranking manually added to the record.

Journal Factors
Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

Full Text
Full Text @ sfx.b-on.pt

footer slogan

Useful Links

Get Help

© 2026 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service