High-Performance Junction Field-Effect Transistor Based on Black Phosphorus/Beta-Ga(2)O(3)Heterostructure

AuthID
 P-00S-NAF
9
Author(s)
Li, C
·
Chen, C
·
Chen, J
·
He, T
·
Li, HW
·
Xie, L
·
Zhang, K
Document Type
Article
Year published
2020
Published
in JOURNAL OF SEMICONDUCTORS, ISSN: 1674-4926
Volume: 41, Issue: 8
Indexing
Wos®
Scopus®
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-85091093320
Wos: WOS:000562269500001
Source Identifiers
ISSN: 1674-4926
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service