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Zinc Concentration Dependence Study of Solution Processed Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-K Dielectric

AuthID
P-003-17A

Author(s)

Nayak, PK

Hong, Y

Document Type

Article

Year published

2010

Published

in APPLIED PHYSICS LETTERS, ISSN: 0003-6951

Volume: 97, Issue: 18, Pages: 183504 (3)

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Wos^®

Scopus^®

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Publication Identifiers

DOI: 10.1063/1.3514249

Scopus: 2-s2.0-78649237787

Wos: WOS:000283934100074

Source Identifiers

ISSN: 0003-6951

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Zinc Concentration Dependence Study of Solution Processed Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-K Dielectric

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