ProfileOfResearchers

182

TÃTULO: Nanostructure characterization of high k materials by spectroscopic ellipsometry Full Text
AUTORES: Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium P of the Spring Meeting of the European-Materials-Research-Society entitled Curent Trends in Optical and X-ray Meterology of Advanced Materials for Nanoscale Devices in APPLIED SURFACE SCIENCE, VOLUME: 253, NÚMERO: 1

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183

TÃTULO: Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer Full Text
AUTORES: Pereira, L ; Martins, RMS ; Schell, N; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Thin Film and Nanostructured Materials for Photovoltaics held at the 2005 EMRS Meeting in THIN SOLID FILMS, VOLUME: 511

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184

TÃTULO: Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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185

TÃTULO: Spectroscopic ellipsometry study of nickel induced crystallization of a-Si Full Text
AUTORES: Pereira, L ; Aguas, H ; Beckers, M; Martins, RMS ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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186

TÃTULO: Study of nanostructured silicon by hydrogen evolution and its application in p-i-n solar cells Full Text
AUTORES: Raniero, L; Ferreira, I ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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187

TÃTULO: The influence of a poly-Si intermediate layer on the crystallization behaviour of Ni-TiSMA magnetron sputtered thin films Full Text
AUTORES: Martins, RMS; Fernandes, FMB ; Silva, RJC; Pereira, L ; Gordo, PR; Maneira, MJP; Beckers, M; Mucklich, A; Schell, N;
PUBLICAÇÃO: 2006, FONTE: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, VOLUME: 83, NÚMERO: 1

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188

TÃTULO: Amorphous silicon based p-i-i-n structure for color sensor
AUTORES: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Aguas, H ; Ferreira, L; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting in Amorphous and Nanocrystalline Silicon Science and Technology-2005, VOLUME: 862

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189

TÃTULO: Effect of the load resistance in the linearity and sensitivity of MIS position sensitive detectors
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2005, FONTE: Symposium on Amorphous and Nanocrystalline Silicon Science and Technology held at the 2005 MRS Spring Meeting in Amorphous and Nanocrystalline Silicon Science and Technology-2005, VOLUME: 862

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