ProfileOfResearchers

192

TÃTULO: Investigation of a-Si : H 1D MIS position sensitive detectors for application in 3D sensors Full Text
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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193

TÃTULO: Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors Full Text
AUTORES: Águas, H; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R;
PUBLICAÇÃO: 2006, FONTE: Journal of Non-Crystalline Solids, VOLUME: 352, NÚMERO: 9-20

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194

TÃTULO: Low temperature processed hafnium oxide: Structural and electrical properties Full Text
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Characterization of High-K Dielectric Materials held at the 2006 E-MRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 6

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195

TÃTULO: Multicomponent wide band gap oxide semiconductors for thin film transistors
AUTORES: Fortunato, E ; Barquinha, P ; Pereira, L ; Goncalves, G; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 6th International Meeting on Information Displays/5th International Display Manufacturing Conference (IMID/IDMC 2006) in IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, VOLUME: 2006

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196

TÃTULO: Multifunctional thin film zinc oxide semiconductors: Application to electronic devices
AUTORES: Fortunato, E ; Goncalves, A; Marques, A; Pimentel, A ; Barquinha, P ; Aguas, H ; Pereira, L ; Raniero, L; Goncalves, G; Ferreira, I ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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197

TÃTULO: Nanostructure characterization of high k materials by spectroscopic ellipsometry Full Text
AUTORES: Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium P of the Spring Meeting of the European-Materials-Research-Society entitled Curent Trends in Optical and X-ray Meterology of Advanced Materials for Nanoscale Devices in APPLIED SURFACE SCIENCE, VOLUME: 253, NÚMERO: 1

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198

TÃTULO: Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer Full Text
AUTORES: Pereira, L ; Martins, RMS ; Schell, N; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Thin Film and Nanostructured Materials for Photovoltaics held at the 2005 EMRS Meeting in THIN SOLID FILMS, VOLUME: 511

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199

TÃTULO: Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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CrossRef: 1

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200

TÃTULO: Spectroscopic ellipsometry study of nickel induced crystallization of a-Si Full Text
AUTORES: Pereira, L ; Aguas, H ; Beckers, M; Martins, RMS ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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