Ana Maria Heleno Branquinho de Amaral


AuthID: R-000-15S

Confirmed Publications: 51



41
TITLE: Properties of high growth rate amorphous silicon deposited by MC-RF-PECVD  Full Text
AUTHORS: Lavareda, G ; de Carvalho, CN; Amaral, A ; Conde, JP ; Vieira, M ; Chu, V ;
PUBLISHED: 2002, SOURCE: 4th Iberian Vacuum Meeting (IVM-4) in VACUUM, VOLUME: 64, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
42
TITLE: Transport properties of indium tin oxide on anisotropic flexible transparent cellulosic substrates
AUTHORS: Amaral, A ; de Carvalho, CN ; Brogueira, P ; Melo, LV ; Lavareda, G ; Godinho, MH ;
PUBLISHED: 2002, SOURCE: Symposium on Organic and Polymeric Materials and Devices-Optical, Electrical and Optoelectronic Properties held at the 2002 MRS Spring Meeting in ORGANIC AND POLYMERIC MATERIALS AND DEVICES-OPTICAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIES, VOLUME: 725
INDEXED IN: Scopus WOS
IN MY: ORCID
43
TITLE: Influence of the initial layers on the optical and electrical properties of ITO films  Full Text
AUTHORS: Amaral, A ; Brogueira, P ; de Carvalho, CN ; Lavareda, G ;
PUBLISHED: 2001, SOURCE: Spring Conference of the E-MRS/IUMRS/ICEM in OPTICAL MATERIALS, VOLUME: 17, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
44
TITLE: ITO thin films deposited by RTE on flexible transparent substrate  Full Text
AUTHORS: de Carvalho, CN ; Luis, A; Lavareda, G ; Amaral, A ; Brogueira, P ; Godinho, MH ;
PUBLISHED: 2001, SOURCE: Spring Conference of the E-MRS/IUMRS/ICEM in OPTICAL MATERIALS, VOLUME: 17, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef: 10
IN MY: ORCID
45
TITLE: Role of the RF power on the structure of defects in a-Si : H films produced by PECVD
AUTHORS: Gordo, PM ; Subrahmanyam, VS; Naia, MD ; Gil, CL; de Lima, AP; Lavareda, G ; de Carvalho, CN ; Amaral, A ;
PUBLISHED: 2001, SOURCE: 12th International Conference on Positron Annihilation (ICPA-12) in POSITRON ANNIHILATION - ICPA-12, VOLUME: 363-3
INDEXED IN: Scopus WOS
IN MY: ORCID
46
TITLE: Study of defects in hydrogenated amorphous silicon by constant photocurrent method and positron annihilation
AUTHORS: Amaral, A ; Lavareda, G ; Nunes de Carvalho, C ; Brogueira, P ; Gordo, PM ; Subrahmanyam, VS; Lopes Gil, C; Duarte Naia, M ; De Lima, AP;
PUBLISHED: 2001, SOURCE: Amorphous and Heterogeneous Silicon Based Films 2001 in Materials Research Society Symposium - Proceedings, VOLUME: 664
INDEXED IN: Scopus
IN MY: ORCID
47
TITLE: Carrier transport and photogeneration in amorphous silicon crystalline silicon heterojunctions with i/n and p/n interfaces
AUTHORS: Yu Vygranenko; Fernandes, M ; Carvalho, CN ; Lavareda, G ; Louro, P ; Amaral, A ; Schwarz, R ; Vieira, M ;
PUBLISHED: 2000, SOURCE: Amorphous and Heterogeneus Silicon Thin Films-2000 in Materials Research Society Symposium - Proceedings, VOLUME: 609
INDEXED IN: Scopus
IN MY: ORCID
48
TITLE: Early stage growth structure of indium tin oxide thin films deposited by reactive thermal evaporation  Full Text
AUTHORS: Amaral, A ; Brogueira, P ; de Carvalho, CN ; Lavareda, G ;
PUBLISHED: 2000, SOURCE: 1999 E-MRS Conference, Symposium B: Protective Coatings and Thin Films in SURFACE & COATINGS TECHNOLOGY, VOLUME: 125, ISSUE: 1-3
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
49
TITLE: Effect of substrate temperature on the surface structure, composition and morphology of indium-tin oxide films  Full Text
AUTHORS: de Carvalho, CN ; do Rego, AMB ; Amaral, A ; Brogueira, P ; Lavareda, G ;
PUBLISHED: 2000, SOURCE: SURFACE & COATINGS TECHNOLOGY, VOLUME: 124, ISSUE: 1
INDEXED IN: Scopus WOS
IN MY: ORCID
50
TITLE: DETERMINATION OF THE DENSITY-OF-STATES IN P-DOPED HYDROGENATED AMORPHOUS-SILICON BY MEANS OF THE MODULATED PHOTOCURRENT EXPERIMENT  Full Text
AUTHORS: LONGEAUD, C; KLEIDER, JP; MENCARAGLIA, D; AMARAL, A ; CARVALHO, CN ;
PUBLISHED: 1993, SOURCE: JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 166, ISSUE: PART 1
INDEXED IN: Scopus WOS
IN MY: ORCID
Página 5 de 6. Total de resultados: 51.

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