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125

TÃTULO: Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering Full Text
AUTORES: Borges, J ; Martin, N; Barradas, NP ; Alves, E ; Eyidi, D; Beaufort, MF; Riviere, JP; Vaz, F ; Marques, L ;
PUBLICAÇÃO: 2012, FONTE: THIN SOLID FILMS, VOLUME: 520, NÚMERO: 21

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126

TÃTULO: High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry Full Text
AUTORES: Magalhaes, S; Barradas, NP ; Alves, E ; Watson, IM; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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127

TÃTULO: In situ study of the growth properties of Ni-rare earth silicides for interlayer and alloy systems on Si(100) Full Text
AUTORES: Demeulemeester, J; Knaepen, W; Smeets, D; Schrauwen, A; Comrie, CM; Barradas, NP ; Vieira, A; Detavernier, C; Temst, K; Vantomme, A;
PUBLICAÇÃO: 2012, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 111, NÚMERO: 4

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128

TÃTULO: Incorporation of N in TiO2 films grown by DC-reactive magnetron sputtering Full Text
AUTORES: Serio, S ; Melo Jorge, MEM ; Nunes, Y ; Barradas, NP ; Alves, E ; Munnik, F;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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129

TÃTULO: Influence of annealing conditions on the formation of regular lattices of voids and Ge quantum dots in an amorphous alumina matrix
AUTORES: Pinto, SRC; Buljan, M; Marques, L ; Martin Sanchez, J; Conde, O ; Chahboun, A ; Ramos, AR ; Barradas, NP ; Alves, E ; Bernstorff, S; Grenzer, J; Mucklich, A; Ramos, MMD ; Gomes, MJM ;
PUBLICAÇÃO: 2012, FONTE: NANOTECHNOLOGY, VOLUME: 23, NÚMERO: 40

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130

TÃTULO: Stopping power of C in Si Full Text
AUTORES: Nuno P Barradas ; Alves, E ; Siketic, Z; Bogdanovic B Radovic;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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