ProfileOfResearchers

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292

TÃTULO: Artificial neural networks for automation of Rutherford backscattering spectroscopy experiments and data analysis
AUTORES: Barradas, NP ; Vieira, A; Patricio, R;
PUBLICAÇÃO: 2002, FONTE: PHYSICAL REVIEW E, VOLUME: 65, NÚMERO: 6

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293

TÃTULO: Composition analysis of the insulating barrier in magnetic tunnel junctions by grazing angle of incidence RBS Full Text
AUTORES: Wei, P; Barradas, NP ; Soares, JC ; da Silva, MF; Kreissig, U; Cardoso, S ; Freitas, PP ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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294

TÃTULO: Degradation of structural and optical properties of InGaN/GaN multiple quantum wells with increasing number of wells Full Text
AUTORES: Pereira, S ; Correia, MR ; Pereira, E; O'Donnell, KP; Alves, E ; Barradas, NP ; Sequeira, AD; Franco, N; Watson, IM; Liu, C;
PUBLICAÇÃO: 2002, FONTE: International Workshop on Nitride Semiconductors (IWN 2002) in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, NÚMERO: 1

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CrossRef: 3

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295

TÃTULO: Depth profiling InGaN/GaN multiple quantum wells by Rutherford backscattering: The role of intermixing Full Text
AUTORES: Pereira, S ; Pereira, E; Alves, E ; Barradas, NP ; O'Donnell, KP; Liu, C; Deatcher, CJ; Watson, IM;
PUBLICAÇÃO: 2002, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 81, NÚMERO: 16

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CrossRef: 12

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296

TÃTULO: Effect of natural oxidation conditions on low resistance spin tunnel junctions Full Text
AUTORES: Zhang, ZG; Freitas, PP ; Ramos, AR ; Barradas, NP ; Soares, JC ;
PUBLICAÇÃO: 2002, FONTE: 46th Annual Conference on Magnetism and Magnetic Materials in JOURNAL OF APPLIED PHYSICS, VOLUME: 91, NÚMERO: 10

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297

TÃTULO: Fitting of RBS data including roughness: Application to Co/Re multilayers Full Text
AUTORES: Barradas, NP ;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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298

TÃTULO: Ion beam studies of MBE grown GaN films on (111) silicon substrates Full Text
AUTORES: Alves, E ; Barradas, NP ; Monteiro, T ; Correia, R; Kreissig, U;
PUBLICAÇÃO: 2002, FONTE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, NÚMERO: 1-4

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299

TÃTULO: Preparation and study of U/Co multilayers
AUTORES: Diego, M; Rosa, MA; Lopes, EB; Alves, E ; Sequeira, AD; Barradas, NP ; Godinho, M; Almeida, M; Gonçalves, AP;
PUBLICAÇÃO: 2002, FONTE: Journal of Nuclear Science and Technology, VOLUME: 39, NÚMERO: sup3

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300

TÃTULO: RBS without humans Full Text
AUTORES: Barradas, NP ; Vieira, A; Patricio, R;
PUBLICAÇÃO: 2002, FONTE: 15th International Conference on Ion-Beam Analysis (IBA-15) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 190, NÚMERO: 1-4

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