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312

TÃTULO: Hyperfine fields of Ta-181 in UFe4Al8 Full Text
AUTORES: Marques, JG ; Barradas, NP ; Alves, E ; Ramos, AR ; Goncalves, AP ; Da Silva, MF; Soares, JC ;
PUBLICAÇÃO: 2001, FONTE: 12th International Conference on Hyperfine Interactions in HYPERFINE INTERACTIONS, VOLUME: 136, NÚMERO: 3-8

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313

TÃTULO: Ion nitriding of Al: growth kinetics and characterisation of the nitride layer Full Text
AUTORES: Telbizova, T; Parascandola, S; Prokert, F; Barradas, NP ; Richter, E; Moller, W;
PUBLICAÇÃO: 2001, FONTE: 7th International Conference on Plasma Surface Engineering (PSE 2000) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 142

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314

TÃTULO: Monte Carlo calculations for neutron and gamma radiation fields on a fast neutron irradiation device
AUTORES: Vieira, A; Ramalho, A; Goncalves, IC; Fernandes, A; Barradas, N ; Marques, JG; Prata, J; Chaussy, C;
PUBLICAÇÃO: 2001, FONTE: International Conference on Advanced Monte Carlo for Radiation Physics, Particle Transport Simulation and Applications in ADVANCED MONTE CARLO FOR RADIATION PHYSICS, PARTICLE TRANSPORT SIMULATION AND APPLICATIONS

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315

TÃTULO: Radiation tests on commercial instrumentation amplifiers, analog switches & DAC's
AUTORES: Agapito, JA; Barradas, NP ; Cardeira, FM; Casas, J; Fernandes, AP; Franco, FJ; Gomes, P; Goncalves, IC; Cachero, AH; Lozano, J; Marques, JG; Paz, A; Prata, MJ; Ramalho, AJG; Ruiz, MAR; Santos, JP; Vieira, A;
PUBLICAÇÃO: 2001, FONTE: 7th Workshop on Electronics for LHC Experiments in PROCEEDINGS OF THE SEVENTH WORKSHOP ON ELECTRONICS FOR LHC EXPERIMENTS, VOLUME: 2001, NÚMERO: 5

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316

TÃTULO: RBS analysis of MBE grown SiGe/(001)Si heterostructures with thin high Ge content SiGe channels for HMOS transistors Full Text
AUTORES: Barradas, NP ; Sequeira, AD; Franco, N; Myronov, M; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLICAÇÃO: 2001, FONTE: Workshop on Advanced Materials Produced and Analyzed with Ion Beams in MODERN PHYSICS LETTERS B, VOLUME: 15, NÚMERO: 28-29

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317

TÃTULO: RBS ANALYSIS OF MBE GROWN SiGe/(001)Si HETEROSTRUCTURES WITH THIN HIGH Ge CONTENT SiGe CHANNELS FOR HMOS TRANSISTORS Full Text
AUTORES: BARRADAS, NP ; SEQUEIRA, AD; FRANCO, N; MYRONOV, M; MIRONOV, OA; PHILLIPS, PJ; PARKER, EHC;
PUBLICAÇÃO: 2001, FONTE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, NÚMERO: 28n29

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318

TÃTULO: Resistance decrease in spin tunnel junctions by control of natural oxidation conditions Full Text
AUTORES: Zhang, ZG; Freitas, PP ; Ramos, AR ; Barradas, NP ; Soares, JC ;
PUBLICAÇÃO: 2001, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 79, NÚMERO: 14

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319

TÃTULO: Rutherford backscattering analysis of thin films and superlattices with roughness
AUTORES: Barradas, NP ;
PUBLICAÇÃO: 2001, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 34, NÚMERO: 14

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