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342

TÃTULO: Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD Full Text
AUTORES: Toal, SJ; Reehal, HS; Webb, SJ; Barradas, NP ; Jeynes, C;
PUBLICAÇÃO: 1999, FONTE: 14th International Vacuum Congress/10th International Conference on Solid Surfaces/5th International Conference on Nanometre-Scale Science and Technology/10th International Conference on Quantitative Surface Analysis in THIN SOLID FILMS, VOLUME: 343, NÚMERO: 1-2

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343

TÃTULO: The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC Full Text
AUTORES: Kozanecki, A; Jeynes, C; Barradas, NP ; Sealy, BJ; Jantsch, W;
PUBLICAÇÃO: 1999, FONTE: 11th International Conference on Ion Beam Modification of Materials (IBMM98) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 148, NÚMERO: 1-4

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344

TÃTULO: Unambiguous automatic evaluation of multiple Ion Beam Analysis data with Simulated Annealing Full Text
AUTORES: Barradas, NP ; Jeynes, C; Webb, RP; Kreissig, U; Grotzschel, R;
PUBLICAÇÃO: 1999, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 149, NÚMERO: 1-2

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345

TÃTULO: Defect tails in Ge implanted Si probed by slow positrons and ion channeling
AUTORES: Knights, AP; Nejim, A; Barradas, NP ; Gwilliam, R; Coleman, PG; Malik, F; Kherandish, H; Romani, S;
PUBLICAÇÃO: 1998, FONTE: Materials-Research-Society Symposium on Silicon Front-End Technology - Materials Processing and Modelling in SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, VOLUME: 532

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346

TÃTULO: High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices Full Text
AUTORES: Barradas, NP ; Jeynes, C; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4

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347

TÃTULO: High precision Rutherford backscattering characterisation of 3-D objects implanted by plasma immersion ion implantation Full Text
AUTORES: Barradas, NP ;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

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348

TÃTULO: Improved ion beam analysis facilities at the University of Surrey Full Text
AUTORES: Jeynes, C; Barradas, NP ; Blewett, MJ; Webb, RP;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

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349

TÃTULO: RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide Full Text
AUTORES: Barradas, NP ; Jeynes, C; Jackson, SM;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

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350

TÃTULO: RBS/simulated annealing analysis of iron-cobalt silicides Full Text
AUTORES: Barradas, NP ; Jeynes, C; Harry, MA;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

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