ProfileOfResearchers

NO MEU:

ORCID |

352

TÃTULO: Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling Full Text
AUTORES: Nejim, A; Barradas, NP ; Jeynes, C; Cristiano, F; Wendler, E; Gartner, K; Sealy, BJ;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

353

TÃTULO: The RBS data furnace: Simulated annealing Full Text
AUTORES: Barradas, NP ; Marriott, PK; Jeynes, C; Webb, RP;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

354

TÃTULO: Alpha-elastic recoil detection analysis of the energy distribution of oxygen ions implanted into silicon with plasma immersion ion implantation Full Text
AUTORES: Barradas, NP ; Maas, AJH; Mandl, S; Gunzel, R;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 81, NÚMERO: 10

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

355

TÃTULO: Comparison of computer generated and ERDA depth profiles of oxygen implanted into silicon with plasma immersion ion implantation Full Text
AUTORES: Barradas, NP ; Maas, AJH; Mandl, S;
PUBLICAÇÃO: 1997, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 124, NÚMERO: 1

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

356

TÃTULO: Comparison of measured and calculated dose for plasma source ion implantation into 3-D objects Full Text
AUTORES: Mandl, S; Barradas, NP ; Brutscher, J; Gunzel, R; Moller, W;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

357

TÃTULO: Formation of ternary (Fe1-xCox)Si-2 structures by ion beam assisted deposition and ion implantation Full Text
AUTORES: Wieser, E; Panknin, D; Barradas, NP ; Betzl, M; Reuther, H; Henrion, W; Lange, H;
PUBLICAÇÃO: 1997, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 124, NÚMERO: 4

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

358

TÃTULO: Influence of the ion irradiation on the properties of beta-FeSi2 layers prepared by ion beam assisted deposition Full Text
AUTORES: Barradas, NP ; Panknin, D; Wieser, E; Schmidt, B; Betzl, M; Mucklich, A; Skorupa, W;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

359

TÃTULO: Short pulse plasma immersion ion implantation of oxygen into silicon: determination of the energy distribution Full Text
AUTORES: Barradas, NP ; Maas, AJH; Mandl, S; Gunzel, R;
PUBLICAÇÃO: 1997, FONTE: 3rd International Workshop on Plasma-Based Ion Implantation in SURFACE & COATINGS TECHNOLOGY, VOLUME: 93, NÚMERO: 2-3

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |