351
TÍTULO: Defect tails in Ge implanted Si probed by slow positrons and ion channeling
AUTORES: Knights, AP; Nejim, A; Barradas, NP ; Gwilliam, R; Coleman, PG; Malik, F; Kherandish, H; Romani, S;
PUBLICAÇÃO: 1998, FONTE: Materials-Research-Society Symposium on Silicon Front-End Technology - Materials Processing and Modelling in SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, VOLUME: 532
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352
TÍTULO: High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Mironov, OA; Phillips, PJ; Parker, EHC;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4
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353
TÍTULO: High precision Rutherford backscattering characterisation of 3-D objects implanted by plasma immersion ion implantation  Full Text
AUTORES: Barradas, NP ;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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354
TÍTULO: Improved ion beam analysis facilities at the University of Surrey  Full Text
AUTORES: Jeynes, C; Barradas, NP ; Blewett, MJ; Webb, RP;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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355
TÍTULO: RBS/simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Jackson, SM;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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356
TÍTULO: RBS/simulated annealing analysis of iron-cobalt silicides  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Harry, MA;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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357
TÍTULO: RBS/simulated annealing analysis of silicide formation in Fe/Si systems  Full Text
AUTORES: Barradas, NP ; Jeynes, C; Homewood, KP; Sealy, BJ; Milosavljevic, M;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4
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358
TÍTULO: Residual post anneal damage of Ge and C co-implantation of Si determined by quantitative RBS-channelling  Full Text
AUTORES: Nejim, A; Barradas, NP ; Jeynes, C; Cristiano, F; Wendler, E; Gartner, K; Sealy, BJ;
PUBLICAÇÃO: 1998, FONTE: 5th European Conference on Accelerators in Applied Research and Technology (ECAART5) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 139, NÚMERO: 1-4
INDEXADO EM: Scopus WOS CrossRef
359
TÍTULO: The RBS data furnace: Simulated annealing  Full Text
AUTORES: Barradas, NP ; Marriott, PK; Jeynes, C; Webb, RP;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
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360
TÍTULO: Alpha-elastic recoil detection analysis of the energy distribution of oxygen ions implanted into silicon with plasma immersion ion implantation  Full Text
AUTORES: Barradas, NP ; Maas, AJH; Mandl, S; Gunzel, R;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 81, NÚMERO: 10
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