131
TITLE: (p,p) non-Rutherford backscattering analysis of silicon carbide  Full Text
AUTHORS: Dai, Z; Soares, JC ; Silva, MF; Chu, V ;
PUBLISHED: 1998, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 142, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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132
TITLE: Air-gap amorphous silicon thin film transistors  Full Text
AUTHORS: Boucinha, M; Chu, V ; Conde, JP ;
PUBLISHED: 1998, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 73, ISSUE: 4
INDEXED IN: Scopus WOS CrossRef
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133
TITLE: Mobility-lifetime product in microdoped amorphous silicon deposited by hot-wipe chemical vapor deposition  Full Text
AUTHORS: Conde, JP ; Castanha, R; Brogueira, P ; Chu, V ;
PUBLISHED: 1998, SOURCE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, ISSUE: PART 1
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134
TITLE: Photoluminescence of polymer-like amorphous carbon films grown in different plasma reactors  Full Text
AUTHORS: Bouree, JE; Heitz, T; Godet, C; Drevillon, B; Conde, JP ; Chu, V ; Berberan Santos, MN ; Fedorov, A ;
PUBLISHED: 1998, SOURCE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, ISSUE: PART 1
INDEXED IN: Scopus WOS
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135
TITLE: Wide band gap a-SiC : H films for optoelectronic applications  Full Text
AUTHORS: Giorgis, F; Giuliani, F; Pirri, CF; Tresso, E; Conde, JP ; Chu, V ;
PUBLISHED: 1998, SOURCE: 17th International Conference on Amorphous and Microcrystalline Semiconductors - Science and Technology (ICAMS 17) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 227, ISSUE: PART 1
INDEXED IN: Scopus WOS CrossRef
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136
TITLE: Amorphous and microcrystalline silicon deposited by low-power electron-cyclotron resonance plasma-enhanced chemical-vapor deposition
AUTHORS: Conde, JP ; Schotten, V; Arekat, S; Brogueira, P ; Sousa, R; Chu, V ;
PUBLISHED: 1997, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, VOLUME: 36, ISSUE: 1A
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137
TITLE: Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500 degrees C
AUTHORS: Conde, JP ; Brogueira, P ; Chu, V ;
PUBLISHED: 1997, SOURCE: PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, VOLUME: 76, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef
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138
TITLE: Amorphous silicon thin-film transistors with a hot-wire active-layer deposited at high growth rate
AUTHORS: Chu, V ; Jarego, J; Silva, H; Silva, T; Boucinha, M; Brogueira, P ; Conde, JP ;
PUBLISHED: 1997, SOURCE: Symposium on Amorphous and Microcrystalline Silicon Technology in AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, VOLUME: 467
INDEXED IN: Scopus WOS
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139
TITLE: Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron
AUTHORS: Brogueira, P ; Chu, V ; Ferro, AC ; Conde, JP ;
PUBLISHED: 1997, SOURCE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, VOLUME: 15, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef: 27
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140
TITLE: Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates  Full Text
AUTHORS: Chu, V ; Jarego, J; Silva, H; Silva, T; Reissner, M; Brogueira, P ; Conde, JP ;
PUBLISHED: 1997, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 70, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef
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