Vitor José Babau Torres


AuthID: R-000-HKG

Confirmed Publications: 64



21
TITLE: Strong compensation of n-type Ge via formation of donor-vacancy complexes  Full Text
AUTHORS: Coutinho, J ; Janke, C; Carvalho, A; Torres, VJB ; Oberg, S; Jones, R; Briddon, PR;
PUBLISHED: 2007, SOURCE: 24th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 401
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
22
TITLE: Ab initio modeling of defect levels in Ge clusters and supercells  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Carvalho, A; Jones, R; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 6
IN MY: ORCID
23
TITLE: Ab initio modeling of interstitial oxygen in crystalline SiGe alloys  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Briddon, PR; Barroso, M ;
PUBLISHED: 2006, SOURCE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, ISSUE: 9-20
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
24
TITLE: Ab initio study of CsI and its surface
AUTHORS: Ribeiro, RM; Coutinho, J ; Torres, VJB ; Jones, R; Sque, SJ; Oberg, S; Shaw, MJ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 74, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 9
IN MY: ORCID
25
TITLE: Ab-initio modeling of acceptor-hydrogen complexes in CdTe  Full Text
AUTHORS: Alberto, P ; Torres, VJB ; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
IN MY: ORCID
26
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals  Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 18
IN MY: ORCID
27
TITLE: Donor-vacancy complexes in Ge: Cluster and supercell calculations
AUTHORS: Coutinho, J ; Oberg, S; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 23
INDEXED IN: Scopus WOS CrossRef: 51
IN MY: ORCID
28
TITLE: Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters  Full Text
AUTHORS: Torres, VJB ; Coutinho, J ; Jones, R; Barroso, M ; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: 23rd International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 376, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID
29
TITLE: Energy levels of atomic hydrogen in germanium from ab-initio calculations  Full Text
AUTHORS: Almeida, LM; Coutinho, J ; Torres, VJB ; Jones, R; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 3
IN MY: ORCID
30
TITLE: Formation energy and migration barrier of a Ge vacancy from ab initio studies  Full Text
AUTHORS: Pinto, HM; Coutinho, J ; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
INDEXED IN: Scopus WOS CrossRef: 34
IN MY: ORCID
Página 3 de 7. Total de resultados: 64.

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