181
TÍTULO: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTORES: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2016, FONTE: Journal of Physics D: Applied Physics, VOLUME: 49, NÚMERO: 13
INDEXADO EM: Scopus
182
TÍTULO: Quantum Well Intermixing and Radiation Effects in InGaN/GaN Multi Quantum Wells
AUTORES: Lorenz, K ; Redondo Cubero, A; Lourenco, MB; Sequeira, MC; Peres, M; Freitas, A; Alves, LC; Alves, E ; Leitao, MP; Rodrigues, J; Ben Sedrine, N; Correia, MR; Monteiro, T ;
PUBLICAÇÃO: 2016, FONTE: Conference on Gallium Nitride Materials and Devices XI in GALLIUM NITRIDE MATERIALS AND DEVICES XI, VOLUME: 9748
INDEXADO EM: Scopus WOS CrossRef: 1
183
TÍTULO: Raman microscopy investigation of beryllium materials
AUTORES: Pardanaud, C; Rusu, MI; Giacometti, G; Martin, C; Addab, Y; Roubin, P; Lungu, CP; Porosnicu, C; Jepu, I; Dinca, P; Lungu, M; Pompilian, OG; Mateus, R; Alves, E ; Rubel, M;
PUBLICAÇÃO: 2016, FONTE: 15th International Conference on Plasma-Facing Materials and Components for Fusion Applications (PFMC) in PHYSICA SCRIPTA, VOLUME: T167, NÚMERO: T167
INDEXADO EM: Scopus WOS CrossRef
184
TÍTULO: Spectroscopic analysis of the NIR emission in Tm implanted AlxGa1-xN layers  Full Text
AUTORES: Rodrigues, J; Fialho, M; Esteves, TC; Santos, NF; Ben Sedrine, N; Rino, L; Neves, AJ; Lorenz, K ; Alves, E ; Monteiro, T ;
PUBLICAÇÃO: 2016, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 120, NÚMERO: 8
INDEXADO EM: Scopus WOS CrossRef: 2
185
TÍTULO: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices  Full Text
AUTORES: Faye, DN; Fialho, M; Magalhaes, S; Alves, E ; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T ; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K ;
PUBLICAÇÃO: 2016, FONTE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
INDEXADO EM: Scopus WOS CrossRef
186
TÍTULO: Study of In distribution on GaInSb:Al crystals by ion beam techniques  Full Text
AUTORES: Streicher, M; Corregidor, V; Catarino, N; Alves, LC; Franco, N; Fonseca, M. ; Martins, L; Alves, E ; Costa, EM; Dedavid, BA;
PUBLICAÇÃO: 2016, FONTE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
INDEXADO EM: Scopus WOS CrossRef
187
TÍTULO: Study of nuclear reactions producing 36Cl by micro-AMS  Full Text
AUTORES: Luís, H; Jesus, AP ; Fonseca, M. ; Cruz, J ; Galaviz, D; Franco, N; Alves, E ;
PUBLICAÇÃO: 2016, FONTE: 6th Nuclear Physics in Astrophysics, NPA 2013 in Journal of Physics: Conference Series, VOLUME: 665, NÚMERO: 1
INDEXADO EM: Scopus CrossRef
188
TÍTULO: Study of nuclear reactions producing Cl-36 by micro-AMS
AUTORES: Luis, H; Jesus, AP ; Fonseca, M. ; Cruz, J ; Galaviz, D; Franco, N; Alves, E ;
PUBLICAÇÃO: 2016, FONTE: 6th Nuclear Physics in Astrophysics Conference (NPA) in NUCLEAR PHYSICS IN ASTROPHYSICS VI (NPA6), VOLUME: 665
INDEXADO EM: WOS
189
TÍTULO: The role and application of ion beam analysis for studies of plasma-facing components in controlled fusion devices
AUTORES: Rubel, M; Petersson, P; Alves, E ; Brezinsek, S; Coad, JP; Heinola, K; Mayer, M; Widdowson, A;
PUBLICAÇÃO: 2016, FONTE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 371
INDEXADO EM: Scopus
190
TÍTULO: The role and application of ion beam analysis for studies of plasma-facing components in controlled fusion devices  Full Text
AUTORES: Rubel, M; Petersson, P; Alves, E ; Brezinsek, S; Coad, JP; Heinola, K; Mayer, M; Widdowson, A;
PUBLICAÇÃO: 2016, FONTE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
INDEXADO EM: Scopus WOS CrossRef: 12
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