191
TÍTULO: The role and application of ion beam analysis for studies of plasma-facing components in controlled fusion devices  Full Text
AUTORES: Rubel, M; Petersson, P; Alves, E ; Brezinsek, S; Coad, JP; Heinola, K; Mayer, M; Widdowson, A;
PUBLICAÇÃO: 2016, FONTE: 22nd International Conference on Ion Beam Analysis (IBA) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 371
INDEXADO EM: Scopus WOS CrossRef: 12
192
TÍTULO: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications  Full Text
AUTORES: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K ; Alves, E ; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLICAÇÃO: 2016, FONTE: SCIENTIFIC REPORTS, VOLUME: 6
INDEXADO EM: Scopus WOS CrossRef
193
TÍTULO: Ag <i><sub>y</sub></i> :TiN <i><sub>x</sub></i> thin films for dry biopotential electrodes: the effect of composition and structural changes on the electrical and mechanical behaviours  Full Text
AUTORES: Pedrosa, P; Machado, D; Borges, J ; Rodrigues, MS; Alves, E ; Barradas, NP ; Martin, N; Evaristo, M; Cavaleiro, A ; Fonseca, C ; Vaz, F ;
PUBLICAÇÃO: 2015, FONTE: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, VOLUME: 119, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 2
194
TÍTULO: Analysis of rotating collectors from the private region of JET with carbon wall and metallic ITER-like wall  Full Text
AUTORES: Beal, J; Widdowson, A; Heinola, K; Baron Wiechec, A; Gibson, KJ; Coad, JP; Alves, E ; Lipschultz, B; Kirschner, A; Matthews, GF; Brezinsek, S;
PUBLICAÇÃO: 2015, FONTE: JOURNAL OF NUCLEAR MATERIALS, VOLUME: 463
INDEXADO EM: Scopus WOS CrossRef
195
TÍTULO: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTORES: Redondo-Cubero, A; Lorenz, K ; Wendler, E; Magalhães, S; Alves, E ; Carvalho, D; Ben, T; Morales, FM; García, R; O’Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: Nanotechnology, VOLUME: 26, NÚMERO: 42
INDEXADO EM: CrossRef
196
TÍTULO: Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing  Full Text
AUTORES: Redondo Cubero, A; Lorenz, K ; Wendler, E; Magalhaes, S; Alves, E ; Carvalho, D; Ben, T; Morales, FM; Garcia, R; O'Donnell, KP; Wetzel, C;
PUBLICAÇÃO: 2015, FONTE: NANOTECHNOLOGY, VOLUME: 26, NÚMERO: 42
INDEXADO EM: Scopus WOS
197
TÍTULO: Biological behaviour of thin films consisting of Au nanoparticles dispersed in a TiO2 dielectric matrix  Full Text
AUTORES: Borges, J ; Costa, D; Antunes, E; Lopes, C; Rodrigues, MS; Apreutesei, M; Alves, E ; Barradas, NP ; Pedrosa, P; Moura, C ; Cunha, L ; Polcar, T; Vaz, F ; Sampaio, P;
PUBLICAÇÃO: 2015, FONTE: Joint Meeting on the 13th European Vacuum Conference / 7th European Topical Conference on Hard Coatings / 9th Iberian Vacuum Meeting in VACUUM, VOLUME: 122
INDEXADO EM: Scopus WOS
198
TÍTULO: Biological behaviour of thin films consisting of Au nanoparticles dispersed in a TiO2 dielectric matrix  Full Text
AUTORES: Borges, J ; Costa, D; Antunes, E; Lopes, C; M.S Rodrigues; Apreutesei, M; Alves, E ; N.P Barradas; Pedrosa, P; Moura, C ; Cunha, L ; Polcar, T; Vaz, F ; Sampaio, P;
PUBLICAÇÃO: 2015, FONTE: Vacuum, VOLUME: 122
INDEXADO EM: CrossRef
199
TÍTULO: Composition and structure variation for magnetron sputtered tantalum oxynitride thin films, as function of deposition parameters  Full Text
AUTORES: Cristea, D; Patru, M; Crisan, A; Munteanu, D; Craciun, D; Barradas, NP ; Alves, E ; Apreutesei, M; Moura, C ; Cunha, L ;
PUBLICAÇÃO: 2015, FONTE: 9th International Conference on Materials Science and Engineering (BRAMAT) in APPLIED SURFACE SCIENCE, VOLUME: 358
INDEXADO EM: Scopus WOS CrossRef
200
TÍTULO: Composition, structure and morphology of Al1-xInxN thin films grown on Al1-yGayN templates with different GaN contents  Full Text
AUTORES: Magalhaes, S; Watson, IM; Pereira, S; Franco, N; Tan, LT; Martin, RW; O'Donnell, KP; Alves, E ; Araujo, JP ; Monteiro, T ; Lorenz, K ;
PUBLICAÇÃO: 2015, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 48, NÚMERO: 1
INDEXADO EM: Scopus WOS CrossRef: 7
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