ProfileOfResearchers

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352

TÃTULO: Comparison of radiation detector performance for different metal contacts on CdZnTe deposited by electroless deposition method Full Text
AUTORES: Zheng, Q; Dierre, F; Ayoub, M; Crocco, J; Bensalah, H; Corregidor, V ; Alves, E ; Fernandez Ruiz, R; Perez, JM; Dieguez, E;
PUBLICAÇÃO: 2011, FONTE: CRYSTAL RESEARCH AND TECHNOLOGY, VOLUME: 46, NÚMERO: 11

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353

TÃTULO: Deposition of C-13 tracer in the JET MkII-HD divertor
AUTORES: Likonen, J; Airila, M; Alves, E ; Barradas, N ; Brezinsek, S; Coad, JP; Devaux, S; Groth, M; Grunhagen, S; Hakola, A; Jachmich, S; Koivuranta, S; Makkonen, T; Rubel, M; Strachan, J; Stamp, M; Widdowson, A;
PUBLICAÇÃO: 2011, FONTE: 13th International Workshop on Plasma-Facing Materials and Components for Fusion Applications (PFMC)/1st International Conference on Fusion Energy Materials Science (FEMaS) in PHYSICA SCRIPTA, VOLUME: T145

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354

TÃTULO: Effect of Eu-implantation and annealing on the GaN quantum dots excitonic recombination
AUTORES: Peres, M; Magalhaes, S; Fellmann, V; Daudin, B; Neves, AJ ; Alves, E ; Lorenz, K ; Monteiro, T ;
PUBLICAÇÃO: 2011, FONTE: NANOSCALE RESEARCH LETTERS, VOLUME: 6, NÚMERO: 1

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355

TÃTULO: Free electron properties and hydrogen in InN grown by MOVPE Full Text
AUTORES: Darakchieva, V; Y Xie; Rogalla, D; W Becker; Lorenz, K ; Alves, E ; Ruffenach, S; Moret, M; Briot, O;
PUBLICAÇÃO: 2011, FONTE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, NÚMERO: 5

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356

TÃTULO: Hydrogen In Group-III Nitrides: An Ion Beam Analysis Study Full Text
AUTORES: Lorenz, K ; Miranda, SMC; Barradas, NP ; Alves, E ; Nanishi, Y; Schaff, WJ; Tu, LW; Darakchieva, V; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

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357

TÃTULO: Hydrogen retention in gallium samples exposed to ISTTOK plasmas Full Text
AUTORES: Gomes, RB ; Mateus, R ; Alves, E ; Fernandes, H ; Silva, C ; Duarte, P;
PUBLICAÇÃO: 2011, FONTE: 26th Symposium on Fusion Technology (SOFT) in FUSION ENGINEERING AND DESIGN, VOLUME: 86, NÚMERO: 9-11

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358

TÃTULO: Influence of the deposition parameters on the growth of SiGe nanocrystals embedded in Al2O3 matrix
AUTORES: Vieira, EMF; Pinto, SRC; Levichev, S ; Rolo, AG ; Chahboun, A ; Buljan, M; Barradas, NP ; Alves, E ; Bernstorff, S; Conde, O ; Gomes, MJM ;
PUBLICAÇÃO: 2011, FONTE: EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials in MICROELECTRONIC ENGINEERING, VOLUME: 88, NÚMERO: 4

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359

TÃTULO: Integration Of SIMS Into A General Purpose IBA Data Analysis Code Full Text
AUTORES: Barradas, NP ; Likonen, J; Alves, E ; Alves, LC ; Coad, P; Hakola, A; Widdowson, A; Floyd D McDaniel; Barney L Doyle;
PUBLICAÇÃO: 2011, FONTE: 21st International Conference on Application of Accelerators in Research and Industry (CAARI) in APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE, VOLUME: 1336

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360

TÃTULO: Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
AUTORES: Pinto, SRC; Rolo, AG ; Buljan, M; Chahboun, A ; Bernstorff, S; Barradas, NP ; Alves, E ; Kashtiban, RJ; Bangert, U; Gomes, MJM ;
PUBLICAÇÃO: 2011, FONTE: NANOSCALE RESEARCH LETTERS, VOLUME: 6, NÚMERO: 1

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