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381

TÃTULO: Stability of erbium and silver implanted in silica-titania sol-gel films Full Text
AUTORES: Ramos, AR ; Marques, C; Alves, E ; Marques, AC ; Almeida, RM ;
PUBLICAÇÃO: 2005, FONTE: 8th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 240, NÚMERO: 1-2

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382

TÃTULO: Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures Full Text
AUTORES: Sanguino, P; Teodoro, OMND ; Niehus, M; Marques, CP; Moutinho, AMC ; Alves, E ; Schwarz, R ;
PUBLICAÇÃO: 2005, FONTE: SENSORS AND ACTUATORS A-PHYSICAL, VOLUME: 121, NÚMERO: 1

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383

TÃTULO: Structural and optical characterization of decorative ZrOxN y thin films
AUTORES: Carvalho, P; Vaz, F ; Cunha, L ; Rebouta, L ; Tavares, CJ; Moura, C; Alves, E ; Cavaleiro, A ; Ph Godeau; Le Bourhis, E; Riviere, JP;
PUBLICAÇÃO: 2005, FONTE: SVC, Society of Vacuum Coaters - 48th Annual Technical Conference in Proceedings, Annual Technical Conference - Society of Vacuum Coaters

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384

TÃTULO: Structural stability of decorative ZrNxOy thin films Full Text
AUTORES: Carvalho, P; Vaz, F ; Rebouta, L ; Carvalho, S ; Cunha, L ; Goudeau, P; Riviere, JP; Alves, E ; Cavaleiro, A ;
PUBLICAÇÃO: 2005, FONTE: 9th International Conference on Plasma Surface Engineering in SURFACE & COATINGS TECHNOLOGY, VOLUME: 200, NÚMERO: 1-4

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385

TÃTULO: Structural, electrical, optical, and mechanical characterizations of decorative ZrOxNy thin films Full Text
AUTORES: Carvalho, P; Vaz, F ; Rebouta, L ; Cunha, L ; Tavares, CJ ; Moura, C ; Alves, E ; Cavaleiro, A ; Goudeau, P; Le Bourhis, E; Riviere, JP; Pierson, JF; Banakh, O;
PUBLICAÇÃO: 2005, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 98, NÚMERO: 2

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386

TÃTULO: The atomic structure of defects formed during doping of GaN with rare earth ions Full Text
AUTORES: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLICAÇÃO: 2005, FONTE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, NÚMERO: 3

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387

TÃTULO: Up conversion from visible to ultraviolet in bulk ZnO implanted with Tm ions Full Text
AUTORES: Monteiro, T ; Neves, AJ ; Soares, MJ ; Carmo, MC; Peres, M; Alves, E ; Rita, E;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 19

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388

TÃTULO: XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates Full Text
AUTORES: Franco, N; Barradas, NP ; Alves, E ; Vallera, AM; Morris, RJH; Mironov, OA; Parker, EHC;
PUBLICAÇÃO: 2005, FONTE: Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 124, NÚMERO: SUPPL.

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389

TÃTULO: Amorphisation of GaN during processing with rare earth ion beams Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6

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390