ProfileOfResearchers

573

TÃTULO: <title>Optical properties of Er<formula><sup><roman>3+</roman></sup></formula> + Yb<formula><sup><roman>3+</roman></sup></formula> doped gallium nitride layers</title>
AUTORES: Vaclav Prajzler; Eduardo Alves ; Christoph Buchal; Ivan Huttel; Jarmila Spirkova; Jiri Oswald; Jiri Zavadil; Vratislav Perina; Vitezslav Jerabek;
PUBLICAÇÃO: 2006, FONTE: Advances in Thin-Film Coatings for Optical Applications III

INDEXADO EM:

NO MEU:

ORCID |

574

TÃTULO: A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
AUTORES: Nogales, E; Lorenz, K ; Wang, K; Roqan, IS; Martin, RW; O'Donnell, KP; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: 2005 Materials Research Society Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 892

INDEXADO EM:

Scopus

NO MEU:

ORCID |

575

TÃTULO: Accurate simulation of backscattering spectra in the presence of sharp resonances Full Text
AUTORES: Barradas, NP ; Alves, E ; Jeynes, C; Tosaki, M;
PUBLICAÇÃO: 2006, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 247, NÚMERO: 2

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

576

TÃTULO: Analysis of sol-gel silica-titania films doped with Ag and Er using artificial neural networks Full Text
AUTORES: Nene, NR; Vieira, A; Marques, AC ; Almeida, RM ; Ramos, AR ; Alves, E ; Barradas, NP ;
PUBLICAÇÃO: 2006, FONTE: 17th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 249, NÚMERO: 1-2 SPEC. ISS.

INDEXADO EM:

Scopus

WOS

NO MEU:

ResearcherID

577

TÃTULO: Analysis of sol–gel silica–titania films doped with Ag and Er using artificial neural networks Full Text
AUTORES: N.R Nené; Vieira, A; A.C Marques; R.M Almeida; A.R Ramos; Alves, E ; N.P Barradas;
PUBLICAÇÃO: 2006, FONTE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 249, NÚMERO: 1-2

INDEXADO EM:

NO MEU:

ORCID |

578

TÃTULO: Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state
AUTORES: Lorenz, K ; Franco, N; Alves, E ; Watson, IM; Martin, RW; O'Donnell, KP;
PUBLICAÇÃO: 2006, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 97, NÚMERO: 8

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

579

TÃTULO: Beam analysis of Ge/Si dots grown on ultrathin SiO2 interlayers
AUTORES: Fonseca, A; Alves, E ; Leitao, JP ; Sobolev, NA; Carmo, MC; Nikiforov, AI;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 2

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

580

TÃTULO: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |