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642

TÃTULO: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTORES: Wojtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Meeting of the European-Materials-Research-Society in OPTICAL MATERIALS, VOLUME: 28, NÚMERO: 6-7

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643

TÃTULO: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTORES: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Optical Materials, VOLUME: 28, NÚMERO: 6-7

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644

TÃTULO: The structure of crystallographic damage in GaN formed during rare earth ion implantation with and without an ultrathin AlN capping layer Full Text
AUTORES: Gloux, F; Ruterana, P; Wojtowicz, T; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6

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645

TÃTULO: Transmission electron microscopy investigation of the structural damage formed in GaN by medium range energy rare earth ion implantation Full Text
AUTORES: Gloux, F; Wojtowicz, T; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 100, NÚMERO: 7

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646

TÃTULO: Transparent thin film transistors based on indium oxide semiconductor Full Text
AUTORES: Lavareda, G ; Nunes N de Carvalho ; Fortunato, E ; Ramos, AR ; Alves, E ; Conde, O ; Amaral, A ;
PUBLICAÇÃO: 2006, FONTE: 1st Conference on Advances in Optical Materials (AIOM) in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 23-25

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647

TÃTULO: Tribocorrosion behaviour of ZrOxNy thin films for decorative applications Full Text
AUTORES: Ferreira, SC; Ariza, E ; Rocha, LA ; Gomes, JR ; Carvalho, P; Vaz, F ; Fernandes, AC; Rebouta, L ; Cunha, L ; Alves, E ; Goudeau, P; Riviere, JP;
PUBLICAÇÃO: 2006, FONTE: Symposium on Protective Coatings and Thin Films held at the E-MRS Spring Meeting in SURFACE & COATINGS TECHNOLOGY, VOLUME: 200, NÚMERO: 22-23

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648

TÃTULO: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers Full Text
AUTORES: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6

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649

TÃTULO: X-ray diffraction study of ordered antiferromagnets for tunnel junctions
AUTORES: Franco, N; Alves, E ; Rickart, M; Guedes, A; Freitas, PP ; Barradas, NP ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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