ProfileOfResearchers

882

TÃTULO: Ion beam mixing of chromium or zirconium films with sapphire Full Text
AUTORES: McHargue, CJ; Joslin, DL; White, CW; daSilva, MF; Alves, E ; Soares, JC ;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Surface Modification of Metals by Ion Beams (SMMIB 95) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 83, NÚMERO: 1-3

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883

TÃTULO: Laser-assisted recrystallization to improve the surface morphology of CdTe epitaxial layers
AUTORES: Sochinskii, NV; Dieguez, E; Alves, E ; daSilva, MF; Soares, JC ; Bernardi, S; Garrido, J; AgulloRueda, F;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 2

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884

TÃTULO: Low temperature epitaxial regrowth of mercury implanted sapphire Full Text
AUTORES: Alves, E ; daSilva, MF; Marques, JG ; Correia, JG ; Soares, JC ; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4

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885

TÃTULO: Radiation damage annealing of Hg implanted InP Full Text
AUTORES: Correia, JG ; Marques, JG ; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K; Vianden, R;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4

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886

TÃTULO: Rutherford backscattering and photoluminescence studies of erbium implanted GaAs
AUTORES: Daly, SE; Henry, MO; Alves, E ; Soares, JC ; Gwilliam, R; Sealy, BJ; Freitag, K; Vianden, R; Stievenard, D;
PUBLICAÇÃO: 1996, FONTE: Proceedings of the 1996 MRS Spring Symposium in Materials Research Society Symposium - Proceedings, VOLUME: 422

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887

TÃTULO: Structural properties of CdTe and Hg1-xCdxTe epitaxial layers grown on sapphire substrates Full Text
AUTORES: Sochinskii, NV; Soares, JC; Alves, E ; daSilva, MF; Franzosi, P; Bernardi, S; Dieguez, E;
PUBLICAÇÃO: 1996, FONTE: Symposium D on Purification, Doping and Defects in II-VI Materials, at the 1995 E-MRS Spring Conference in JOURNAL OF CRYSTAL GROWTH, VOLUME: 161, NÚMERO: 1-4

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888

TÃTULO: Structural properties of Hg1-xMnxTe layers grown on CdTe substrates by liquid phase epitaxy
AUTORES: Sochinskii, NV; Soares, JC ; Alves, E ; daSilva, MF; Franzosi, P; Dieguez, E;
PUBLICAÇÃO: 1996, FONTE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 11, NÚMERO: 4

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889

TÃTULO: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
AUTORES: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS

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890

TÃTULO: Incorporation and stability of erbium in sapphire by ion implantation Full Text
AUTORES: Alves, E ; daSilva, MF; vandenHoven, GN; Polman, A; Melo, AA; Soares, JC ;
PUBLICAÇÃO: 1995, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 106, NÚMERO: 1-4

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