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582

TÃTULO: Impedance study of the electrical properties of poly-Si thin film transistors Full Text
AUTORES: Pereira, L ; Raniero, L; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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583

TÃTULO: Influence of the ex-situ and in-situ annealed self-buffer layer on ZnO film Full Text
AUTORES: Wang, JZ; Sallet, V; Amiri, G; Rommelluere, JF; Lusson, A; Rzepka, E; Lewis, JE; Galtier, P; Fortunato, E ; Martins, R ; Gorochov, O;
PUBLICAÇÃO: 2006, FONTE: 12th International Conference on II-VI Compounds in Physica Status Solidi C - Current Topics in Solid State Physics, Vol 3, No 4, VOLUME: 3, NÚMERO: 4

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584

TÃTULO: Influence of the self-buffer layer on ZnO film grown by atmospheric metal organic chemical vapor deposition Full Text
AUTORES: Jinzhong Z Wang; Vincent Sallet; Gaele Amiri; Jean Francois Rommelluere; Alain Lusson; John E Lewis; Pierre Galtier; Fortunato, E ; Martins, R ; Ouri Gorochov;
PUBLICAÇÃO: 2006, FONTE: THIN SOLID FILMS, VOLUME: 515, NÚMERO: 4

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585

TÃTULO: Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide Full Text
AUTORES: Barquinha, P ; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ; Fortunato, E ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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586

TÃTULO: Influence of time, light and temperature on the electrical properties of zinc oxide TFTs Full Text
AUTORES: Barquinha, P ; Fortunato, E ; Goncalves, A; Pimentel, A ; Marques, A; Pereira, L ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on ZnO and Related Materials held at the 2005 Spring Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 39, NÚMERO: 1-4

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CrossRef: 29

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587

TÃTULO: Insights on amorphous silicon nip and MIS 3D position sensitive detectors
AUTORES: Martins, R ; Costa, D; Aguas, H ; Soares, F; Marques, A; Ferreira, I ; Borges, P; Pereira, S; Raniero, L; Fortunato, E ;
PUBLICAÇÃO: 2006, FONTE: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM) in ADVANCED MATERIALS FORUM III, PTS 1 AND 2, VOLUME: 514-516, NÚMERO: PART 1

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CrossRef: 2

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588

TÃTULO: Investigation of a-Si : H 1D MIS position sensitive detectors for application in 3D sensors Full Text
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: 21st International Conference on Amorphous and Nanocrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 352, NÚMERO: 9-20

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589

TÃTULO: Investigation of a-Si:H 1D MIS position sensitive detectors for application in 3D sensors Full Text
AUTORES: Águas, H; Pereira, L ; Raniero, L; Costa, D; Fortunato, E ; Martins, R;
PUBLICAÇÃO: 2006, FONTE: Journal of Non-Crystalline Solids, VOLUME: 352, NÚMERO: 9-20

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590

TÃTULO: Low temperature processed hafnium oxide: Structural and electrical properties Full Text
AUTORES: Pereira, L ; Barquinha, P ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Characterization of High-K Dielectric Materials held at the 2006 E-MRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, NÚMERO: 6

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