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682

TÃTULO: Materials Science Forum: Preface
AUTORES: Martins, R ; Fortunato, E ; Ferreira, I ; Dias, CJ;
PUBLICAÇÃO: 2004, FONTE: Advanced Materials Forum II: Proceedings of the II International Materials Symposium: Materials 2003 and XI Encontro da Sociedade Portugesa de Materials, 2003 ATERIAIS in Materials Science Forum, VOLUME: 455-456

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683

TÃTULO: MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
AUTORES: Hugo Águas; Luís Pereira; Leandro Raniero; Elvira Fortunato ; Rodrigo Martins;
PUBLICAÇÃO: 2004, FONTE: Materials Science Forum, VOLUME: 455-456

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684

TÃTULO: MIS photodiodes of polyrnorphous silicon deposited at higher growth rates by 27.12 MHz PECVD discharge
AUTORES: Aguas, H ; Pereira, L ; Raniero, L; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456

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685

TÃTULO: New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering Full Text
AUTORES: Fortunato, E ; Goncalves, A; Marques, A; Viana, A ; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Protective Coatings and Thin Films held at the E-MRS 20th Spring Meeting in SURFACE & COATINGS TECHNOLOGY, VOLUME: 180

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CrossRef: 51

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686

TÃTULO: Next generation of thin film transistors based on zinc oxide
AUTORES: Fortunato, E ; Barquinha, P ; Pimentel, A ; Goncalves, A; Pereira, L ; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811

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687

TÃTULO: Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application Full Text
AUTORES: Pereira, L ; Marques, A; Aguas, H ; Nedev, N; Georgiev, S; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, NÚMERO: 1-3

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688

TÃTULO: Physical Properties of Sputtered ITO and WO<sub>3</sub> Thin Films
AUTORES: Hai Ning Cui; Vasco Teixeira; A.C Monteiro; Elvira Fortunato ; Rodrigo Martins; Bertran, E;
PUBLICAÇÃO: 2004, FONTE: Materials Science Forum, VOLUME: 455-456

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689

TÃTULO: Physical properties of sputtered ITO and WO3 thin films
AUTORES: Cui, HN; Teixeira, V ; Monteiro, A; Fortunato, E ; Martins, R ; Bertran, E;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456

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690

TÃTULO: Polycrystalline silicon obtained by gold metal induced crystallization Full Text
AUTORES: Pereira, L ; Aguas, H ; Martins, RM ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, NÚMERO: 1 SPEC. ISS.

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