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801

TÃTULO: High field-effect mobility zinc oxide thin film transistors produced at room temperature Full Text
AUTORES: Fortunato, E ; Pimentel, A ; Pereira, L ; Goncalves, A; Lavareda, G ; Aguas, H ; Ferreira, I ; Carvalho, CN ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338

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802

TÃTULO: High mobility nanocrystalline indium zinc oxide deposited at room temperature
AUTORES: Fortunato, E ; Pimentel, A ; Goncalves, A; Marques, A; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Integration of Advanced Micro-and Nanoelectronic Devices held at the 2004 MRS Spring Meeting in INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, VOLUME: 811

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803

TÃTULO: High quality conductive gallium-doped zinc oxide films deposited at room temperature Full Text
AUTORES: Fortunato, E ; Assuncao, V; Goncalves, A; Marques, A; Aguas, H ; Pereira, L ; Ferreira, I ; Vilarinho, P ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Thin Film and Nano-Structured Materials for Photovoltaics in THIN SOLID FILMS, VOLUME: 451

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804

TÃTULO: Improvement of field-effect mobilities in TFTs: Surface plasma treatments vs stack dielectric structures
AUTORES: Lavareda, G ; de Carvalho, CN ; Amaral, A ; Fortunato, E ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456

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805

TÃTULO: Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering Full Text
AUTORES: Barquinha, P ; Pereira, L ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: Symposium on New Materials in Future Silicon Technology Held at the E-MAR 2004 Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 7, NÚMERO: 4-6

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806

TÃTULO: Influence of the rapid thermal annealing on the properties of thin a-Si films
AUTORES: Nedev, N; Beshkov, G; Fortunato, E ; Georgiev, SS; Ivanov, T; Raniero, L; Zhang, SB; Martins, R ;
PUBLICAÇÃO: 2004, FONTE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456

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807

TÃTULO: ITO films deposited by rf-PERTE on unheated polymer substrates-properties dependence on In-Sn alloy composition Full Text
AUTORES: de Carvalho, CN ; Lavareda, G ; Fortunato, E ; Vilarinho, R; Amaral, A ;
PUBLICAÇÃO: 2004, FONTE: Symposium on Functional Metal Oxides - Semiconductor Structures held at the E-MRS 2003 Meeting in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 109, NÚMERO: 1-3

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808

TÃTULO: Materials Science Forum: Preface
AUTORES: Martins, R ; Fortunato, E ; Ferreira, I ; Dias, CJ;
PUBLICAÇÃO: 2004, FONTE: Advanced Materials Forum II: Proceedings of the II International Materials Symposium: Materials 2003 and XI Encontro da Sociedade Portugesa de Materials, 2003 ATERIAIS in Materials Science Forum, VOLUME: 455-456

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809

TÃTULO: MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge
AUTORES: Hugo Águas; Luís Pereira; Leandro Raniero; Elvira Fortunato ; Rodrigo Martins;
PUBLICAÇÃO: 2004, FONTE: Materials Science Forum, VOLUME: 455-456

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