Isabel Maria Mercês Ferreira


AuthID: R-000-6CJ

Confirmed Publications: 172



61
TITLE: Study of a-SiC : H buffer layer on nc-Si/a-Si : H solar cells deposited by PECVD technique.  Full Text
AUTHORS: Raniero, L; Ferreira, I ; Aguas, H ; Zhang, S; Fortunato, E ; Martins, R ;
PUBLISHED: 2005, SOURCE: 31st IEEE Photovoltaic Specialists Conference in Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
62
TITLE: Batch processing method to deposit a-Si : H films by PECVD
AUTHORS: Raniero, L; Aguas, H ; Pereira, L ; Fortunato, E ; Ferreira, I ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID
63
TITLE: Characterization of silicon carbide thin films prepared by VHF-PECVD technology  Full Text
AUTHORS: Zhang, S; Raniero, L; Fortunato, E ; Pereira, L ; Martins, N; Canhola, P; Ferreira, I ; Nedev, N; Aguas, H ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
64
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, S; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Journal of Non-Crystalline Solids, VOLUME: 338-340, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus CrossRef
IN MY: ORCID
65
TITLE: Characterization of the density of states of polymorphous silicon films produced at 13.56 and 27.12 MHz using CPM and SCLC techniques  Full Text
AUTHORS: Raniero, L; Pereira, L ; Zhang, SB; Ferreira, I ; Aguas, H ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338
INDEXED IN: WOS
66
TITLE: Composition, structure and optical characteristics of polymorphous silicon films deposited by PECVD at 27.12 MHz
AUTHORS: Martins, R ; Aguas, H ; Ferreira, I ; Fortunato, E ; Raniero, L; Cabarrocas, PRI;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID
67
TITLE: Detection limits of a nip a-Si:H linear array position sensitive detector
AUTHORS: Martins, R ; Costa, D; Aguas, H ; Soares, F; Marques, A; Ferreira, I ; Borges, P; Fortunato, E ;
PUBLISHED: 2004, SOURCE: Amorphous and Nanocrystalline Silicon Science and Technology - 2004 in Materials Research Society Symposium Proceedings, VOLUME: 808
INDEXED IN: Scopus
IN MY: ORCID
68
TITLE: Effect of an interfacial oxide layer in the annealing behaviour of Au/a-Si : H MIS photodiodes  Full Text
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 20th International Conference on Amorphous and Microcrystalline Semiconductors in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 338, ISSUE: 1 SPEC. ISS.
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
69
TITLE: Effect of annealing on gold rectifying contacts in amorphous silicon
AUTHORS: Aguas, H ; Pereira, L ; Ferreira, I ; Ramos, AR ; Viana, AS ; Andreu, J; Vilarinho, P ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: 2nd International Materials Symposium in ADVANCED MATERIALS FORUM II, VOLUME: 455-456
INDEXED IN: Scopus WOS
IN MY: ORCID | ResearcherID
70
TITLE: Ethanol vapour detector based in porous a-Si : H films produced by HW-CVD technique  Full Text
AUTHORS: Ferreira, I ; Fortunato, E ; Martins, R ;
PUBLISHED: 2004, SOURCE: Symposium on New Materials and Technologies in Sensor Applications in SENSORS AND ACTUATORS B-CHEMICAL, VOLUME: 100, ISSUE: 1-2
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID | ResearcherID
Página 7 de 18. Total de resultados: 172.

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