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182

TÃTULO: Acceptor-hydrogen interaction in InAs
AUTORES: Burchard, A; Correia, JG ; Deicher, M; Forkel Wirth, D; Magerle, R; Prospero, A; Stotzler, A;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, NÚMERO: PART 2

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183

TÃTULO: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900°C
AUTORES: Wahl, U ; Correia, JG ; Langouche, G; Marques, JG ; Vantomme, A;
PUBLICAÇÃO: 1997, FONTE: Materials Science Forum, VOLUME: 258-263, NÚMERO: 9993

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184

TÃTULO: Direct evidence for tetrahedral interstitial Er in Si
AUTORES: Wahl, U ; Vantomme, A; DeWachter, J; Moons, R; Langouche, G; Marques, JG ; Correia, JG ;
PUBLICAÇÃO: 1997, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 79, NÚMERO: 11

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185

TÃTULO: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTORES: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLICAÇÃO: 1997, FONTE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469

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186

TÃTULO: Microscopic studies of implanted As-73 in diamond Full Text
AUTORES: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLICAÇÃO: 1997, FONTE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127

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187

TÃTULO: Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO3 Full Text
AUTORES: Kling, A ; Rebouta, L ; Marques, JG ; Correia, JG ; daSilva, MF; Dieguez, E; AgulloLopez, F; Soares, JC ;
PUBLICAÇÃO: 1996, FONTE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, NÚMERO: 1-4

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188

TÃTULO: Low temperature epitaxial regrowth of mercury implanted sapphire Full Text
AUTORES: Alves, E ; daSilva, MF; Marques, JG ; Correia, JG ; Soares, JC ; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4

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189

TÃTULO: Radiation damage annealing of Hg implanted InP Full Text
AUTORES: Correia, JG ; Marques, JG ; Soares, JC ; Alves, E ; daSilva, MF; Freitag, K; Vianden, R;
PUBLICAÇÃO: 1996, FONTE: Symposium 1 on New Trends in Ion Beam Processing of Materials, at the E-MRS 96 Spring Meeting in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 120, NÚMERO: 1-4

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190

TÃTULO: Radioactive ion beams for solid state research Full Text
AUTORES: Correia, JG ;
PUBLICAÇÃO: 1996, FONTE: 4th European Conference on Accelerators in Applied Research and Technology (ECAART-4) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 113, NÚMERO: 1-4

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