João Guilherme Martins Correia


AuthID: R-000-6ZY

Confirmed Publications: 123



101
TITLE: Lattice sites and stability of implanted Er in FZ and CZ Si
AUTHORS: Wahl, U; Correia, JG ; Langouche, G; Vantomme, A;
PUBLISHED: 1998, SOURCE: Symposium on Materials and Devices for Silicon-Based Optoelectronics, at the 1997 MRS Fall Meeting in MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, VOLUME: 486
INDEXED IN: Scopus WOS
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102
TITLE: Microscopic studies of radioactive Hg implanted in YBa2Cu3O6+x superconducting thin films  Full Text
AUTHORS: Amaral, VS ; Correia, JG ; Lourenco, AACS; Marques, JG ; Mendes, JA ; Baptista, MA; Araujo, JP ; Moreira, JM; Sousa, JB ; Alves, E ; da Silva, MF; Soares, JC ;
PUBLISHED: 1998, SOURCE: International Conference on Magnetism in JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, VOLUME: 177, ISSUE: PART 1
INDEXED IN: Scopus WOS CrossRef: 3
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103
TITLE: Radioactive ion beams and techniques for solid state research  Full Text
AUTHORS: Correia, JG ;
PUBLISHED: 1998, SOURCE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
INDEXED IN: Scopus WOS CrossRef
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104
TITLE: The influence of oxygen on the lattice sites of rare earths in silicon  Full Text
AUTHORS: Wahl, U; Vantomme, A; Langouche, G; Correia, JG ;
PUBLISHED: 1998, SOURCE: Symposium on Light Emission from Silicon - Procress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in JOURNAL OF LUMINESCENCE, VOLUME: 80, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
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105
TITLE: Acceptor-hydrogen interaction in InAs
AUTHORS: Burchard, A; Correia, JG ; Deicher, M; Forkel Wirth, D; Magerle, R; Prospero, A; Stotzler, A;
PUBLISHED: 1997, SOURCE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2, ISSUE: PART 2
INDEXED IN: Scopus WOS
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106
TITLE: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900°C
AUTHORS: Wahl, U ; Correia, JG ; Langouche, G; Marques, JG ; Vantomme, A;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 258-263, ISSUE: 9993
INDEXED IN: Scopus
IN MY: ORCID
107
TITLE: Direct evidence for tetrahedral interstitial Er in Si
AUTHORS: Wahl, U ; Vantomme, A; DeWachter, J; Moons, R; Langouche, G; Marques, JG ; Correia, JG ;
PUBLISHED: 1997, SOURCE: PHYSICAL REVIEW LETTERS, VOLUME: 79, ISSUE: 11
INDEXED IN: Scopus WOS CrossRef
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108
TITLE: Lattice sites and damage annealing of implanted Tm and Er in Si
AUTHORS: Wahl, U; Correia, JG ; De Wachter, J; Langouche, G; Marques, JG ; Moons, R; Vantomme, A;
PUBLISHED: 1997, SOURCE: Symposium on Defects and Diffusion in Silicon Processing in DEFECTS AND DIFFUSION IN SILICON PROCESSING, VOLUME: 469
INDEXED IN: Scopus WOS
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109
TITLE: Microscopic studies of implanted As-73 in diamond  Full Text
AUTHORS: Correia, JG ; Marques, JG ; Alves, E ; ForkelWirth, D; Jahn, SG; Restle, M; Dalmer, M; Hofsass, H; BharuthRam, K;
PUBLISHED: 1997, SOURCE: 10th International Conference on Ion Beam Modification of Materials (IBMM-96) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 127
INDEXED IN: Scopus WOS CrossRef
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110
TITLE: Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO3  Full Text
AUTHORS: Kling, A ; Rebouta, L ; Marques, JG ; Correia, JG ; daSilva, MF; Dieguez, E; AgulloLopez, F; Soares, JC ;
PUBLISHED: 1996, SOURCE: 12th International Conference on Ion Beam Analysis (IBA-12) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 118, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef
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Página 11 de 13. Total de resultados: 123.

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