291
TÍTULO: Doping of amorphous and microcrystalline silicon films deposited by hot-wire chemical vapor deposition using phosphine and trimethylboron
AUTORES: Brogueira, P ; Chu, V ; Ferro, AC ; Conde, JP ;
PUBLICAÇÃO: 1997, FONTE: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, VOLUME: 15, NÚMERO: 6
INDEXADO EM: Scopus WOS CrossRef: 27
292
TÍTULO: Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates  Full Text
AUTORES: Chu, V ; Jarego, J; Silva, H; Silva, T; Reissner, M; Brogueira, P ; Conde, JP ;
PUBLICAÇÃO: 1997, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 70, NÚMERO: 20
INDEXADO EM: Scopus WOS CrossRef
293
TÍTULO: Post-deposition annealing and hydrogenation of hot-wire amorphous and microcrystalline silicon films
AUTORES: Conde, JP ; Brogueira, P ; Chu, V ;
PUBLICAÇÃO: 1997, FONTE: Symposium Q on Advances in Microcrystalline and Nanocrystalline Semiconductors - 1996, at the 1996 MRS Fall Meeting in ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, VOLUME: 452
INDEXADO EM: Scopus WOS
295
TÍTULO: Amorphous silicon-carbon alloys deposited by electron-cyclotron resonance PECVD
AUTORES: Chu, V ; Conde, JP ;
PUBLICAÇÃO: 1996, FONTE: 14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY - 1996, VOLUME: 420
INDEXADO EM: Scopus WOS
296
TÍTULO: In-plane photoconductivity in amorphous silicon doping multilayers
AUTORES: Conde, JP ; Silva, M; Chu, V ; Gleskova, H; Vasanth, K; Wagner, S; Shen, DS; Popovic, P; Grebner, S; Schwarz, R;
PUBLICAÇÃO: 1996, FONTE: PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, VOLUME: 74, NÚMERO: 4
INDEXADO EM: Scopus WOS CrossRef
297
TÍTULO: Photoconductive analysis of defect density of hydrogenated amorphous silicon during room-temperature plasma posthydrogenation, light soaking, and thermal annealing
AUTORES: Condo, JP ; Goncalves, M; Brogueira, P ; Schotten, V; Chu, V ;
PUBLICAÇÃO: 1996, FONTE: PHYSICAL REVIEW B, VOLUME: 53, NÚMERO: 4
INDEXADO EM: Scopus WOS
298
TÍTULO: Study of doped-intrinsic interfaces in amorphous semiconductors using doping multilayers
AUTORES: Conde, JP ; Silva, M; Chu, V ;
PUBLICAÇÃO: 1996, FONTE: 7th International Conference on Intergranular and Interphase Boundaries in Materials (iib95) in INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2, VOLUME: 207-2, NÚMERO: PART 2
INDEXADO EM: Scopus WOS
299
TÍTULO: The influence of hydrogen dilution and substrate temperature in hot-wire deposition of amorphous and microcrystalline silicon with filament temperatures between 1900 and 2500 degrees C
AUTORES: Conde, JP ; Brogueira, P ; Castanha, R; Chu, V ;
PUBLICAÇÃO: 1996, FONTE: 14th Symposium on Amorphous Silicon Technology, at the 1996 MRS Spring Meeting in AMORPHOUS SILICON TECHNOLOGY - 1996, VOLUME: 420
INDEXADO EM: Scopus WOS
300
TÍTULO: Amorphous-to-microcrystalline silicon transition in hot-wire chemical vapor deposition
AUTORES: Brogueira, P ; Chu, V; Conde, JP ;
PUBLICAÇÃO: 1995, FONTE: Proceedings of the 1995 MRS Spring Meeting in Materials Research Society Symposium - Proceedings, VOLUME: 377
INDEXADO EM: Scopus
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