José Pedro de Abreu Coutinho


AuthID: R-000-8V3

Confirmed Publications: 105



11
TITLE: Electronic structure modification of Si nanocrystals with F-4-TCNQ
AUTHORS: Carvalho, A; Coutinho, J ; Barroso, M ; Silva, EL; Oberg, S; Rayson, M; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 12
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
12
TITLE: Electronic structure of Zn, Cu and Ni impurities in germanium  Full Text
AUTHORS: Silva, EL; Coutinho, J ; Carvalho, A; Torres, VJB ; Barroso, M ; Jones, R; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 23, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
IN MY: ORCID
13
TITLE: Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys
AUTHORS: Leitao, JP ; Carvalho, A; Coutinho, J ; Pereira, RN ; Santos, NM; Ankiewicz, AO; Sobolev, NA; Barroso, M ; Lundsgaard L Hansen; Nylandsted N Larsen; Briddon, PR;
PUBLISHED: 2011, SOURCE: PHYSICAL REVIEW B, VOLUME: 84, ISSUE: 16
INDEXED IN: Scopus WOS
IN MY: ORCID
14
TITLE: Radiation-induced defect reactions in tin-doped Ge crystals
AUTHORS: Vladimir P Markevich; Anthony R Peaker; Bruce Hamilton; Valentin V Litvinov; Yurii M Pokotilo; Alla N Petukh; Stanislav B Lastovskii; Jose Coutinho ; Mark J Rayson; Patrick Briddon; Patrick R Briddon;
PUBLISHED: 2011, SOURCE: 14th International Biannual Meeting on Gettering and Defect Engineering in Semiconductor Technology, GADEST2011 in Diffusion and Defect Data Pt.B: Solid State Phenomena, VOLUME: 178-179
INDEXED IN: Scopus CrossRef: 3
IN MY: ORCID
15
TITLE: Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Lastovskii, SB; Murin, LI; Coutinho, J ; Torres, VJB ; Dobaczewski, L; Svensson, BG;
PUBLISHED: 2011, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 208, ISSUE: 3
INDEXED IN: Scopus WOS CrossRef: 24
IN MY: ORCID
16
TITLE: Surface-phosphorus interaction in Si nanocrystals  Full Text
AUTHORS: Carvalho, A; Celikkol, B; Coutinho, J ; Briddon, PR;
PUBLISHED: 2011, SOURCE: International Conference on Extended Defects in Semiconductors, EDS 2010 in Journal of Physics: Conference Series, VOLUME: 281, ISSUE: 1
INDEXED IN: Scopus CrossRef: 4
IN MY: ORCID
17
TITLE: The oxygen dimer in Si: Its relationship to the light-induced degradation of Si solar cells?  Full Text
AUTHORS: Murin, LI; Tolkacheva, EA; Markevich, VP; Peaker, AR; Hamilton, B; Monakhov, E; Svensson, BG; Lindstrom, JL; Santos, P; Coutinho, J ; Carvalho, A;
PUBLISHED: 2011, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 98, ISSUE: 18
INDEXED IN: Scopus WOS CrossRef: 35
IN MY: ORCID
18
TITLE: Tin-vacancy complex in germanium  Full Text
AUTHORS: Markevich, VP; Peaker, AR; Hamilton, B; Litvinov, VV; Yu. M Pokotilo; Lastovskii, SB; Coutinho, J ; Carvalho, A; Rayson, MJ; Briddon, PR;
PUBLISHED: 2011, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 109, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 20
IN MY: ORCID
19
TITLE: Electronic effects in the formation of apparently noisy scanning tunneling microscopy images of Sr on Si(111)-7x7
AUTHORS: Zhachuk, R; Olshanetsky, B; Coutinho, J ; Pereira, S ;
PUBLISHED: 2010, SOURCE: PHYSICAL REVIEW B, VOLUME: 81, ISSUE: 16
INDEXED IN: Scopus WOS CrossRef: 15
IN MY: ORCID
20
TITLE: Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si  Full Text
AUTHORS: Coutinho, J ; Castro, F; Torres, VJB ; Carvalho, A; Barroso, M ; Briddon, PR;
PUBLISHED: 2010, SOURCE: Symposium on Silicon and Germanium Issues for Future CMOS Devices held at the 2009 E-MRS Spring Meeting in THIN SOLID FILMS, VOLUME: 518, ISSUE: 9
INDEXED IN: Scopus WOS CrossRef: 2
IN MY: ORCID
Página 2 de 11. Total de resultados: 105.

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