ProfileOfResearchers

162

TÃTULO: AlN content influence on the properties of AlxGa1-xN doped with Pr ions Full Text
AUTORES: Fialho, M; Magalhaes, S; Alves, LC ; Marques, C; Maalej, R; Monteiro, T ; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 273

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163

TÃTULO: Band gap engineering approaches to increase InGaN/GaN LED efficiency Full Text
AUTORES: Maur, MAD; Lorenz, K ; Di Carlo, A;
PUBLICAÇÃO: 2012, FONTE: 11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD) in OPTICAL AND QUANTUM ELECTRONICS, VOLUME: 44, NÚMERO: 3-5

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164

TÃTULO: Cd doping of AlN via ion implantation studied with perturbed angular correlation Full Text
AUTORES: Kessler, P; Lorenz, K ; Miranda, SMC; Simon, R; Correia, JG ; Johnston, K; Vianden, R; Isolde collaboration the;
PUBLICAÇÃO: 2012, FONTE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, NÚMERO: 3-4

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165

TÃTULO: Cd ion implantation in AlN Full Text
AUTORES: Miranda, SMC; Franco, N; Alves, E ; Lorenz, K ;
PUBLICAÇÃO: 2012, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 289

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166

TÃTULO: Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping
AUTORES: Kachkanov, V; Dolbnya, IP; O'Donnell, KP; Lorenz, K ; Pereira, S ; Martin, RW; Edwards, PR; Watson, IM;
PUBLICAÇÃO: 2012, FONTE: 2011 MRS Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1396

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167

TÃTULO: Damage formation and recovery in Fe implanted 6H-SiC Full Text
AUTORES: Miranda, P; Wahl, U ; Catarino, N; Lorenz, K ; Correia, JG ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: 16th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 286

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168

TÃTULO: Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
AUTORES: Lacroix, B; Leclerc, S; Ruterana, P; Declemy, A; Miranda, SMC; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2012, FONTE: 2011 MRS Spring Meeting in Materials Research Society Symposium Proceedings, VOLUME: 1342

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169

TÃTULO: Doped gallium oxide nanowires for photonics
AUTORES: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K ; Alves, E ; Garcia, JA;
PUBLICAÇÃO: 2012, FONTE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263

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