ProfileOfResearchers

NO MEU:

ORCID |

202

TÃTULO: Identification of the prime optical center in GaN:Eu3+
AUTORES: Roqan, IS; O'Donnell, KP; Martin, RW; Edwards, PR; Song, SF; Vantomme, A; Lorenz, K ; Alves, E ; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: PHYSICAL REVIEW B, VOLUME: 81, NÚMERO: 8

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

203

TÃTULO: Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11-22) InGaN layers Full Text
AUTORES: Das, A; Magalhaes, S; Kotsar, Y; Kandaswamy, PK; Gayral, B; Lorenz, K ; Alves, E ; Ruterana, P; Monroy, E;
PUBLICAÇÃO: 2010, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 96, NÚMERO: 18

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

204

TÃTULO: Influence of thermal annealing on the structural and optical properties of GaN/AlN quantum dots Full Text
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Alves, E ; Lorenz, K ; Okuno Vila, H; Fellmann, V; Bougerol, C; Daudin, B;
PUBLICAÇÃO: 2010, FONTE: E-MRS Fall Meeting on Wide Band Gap II-VI and III-V Semiconductors in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 247, NÚMERO: 7

INDEXADO EM:

Scopus

WOS

Handle

NO MEU:

ORCID

205

TÃTULO: Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy Full Text
AUTORES: Lorenz, K ; Alves, E ; Roqan, IS; O'Donnell, KP; Nishikawa, A; Fujiwara, Y; Bockowski, M;
PUBLICAÇÃO: 2010, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 97, NÚMERO: 11

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

206

TÃTULO: Optical and Structural Properties of an Eu Implanted Gallium Nitride Quantum Dots/Aluminium Nitride Superlattice
AUTORES: Peres, M; Neves, AJ ; Monteiro, T ; Magalhaes, S; Franco, N; Lorenz, K ; Alves, E ; Damilano, B; Massies, J; Dussaigne, A; Grandjean, N;
PUBLICAÇÃO: 2010, FONTE: 2nd International Conference on Advanced Nano Materials in JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, VOLUME: 10, NÚMERO: 4

INDEXADO EM:

Scopus

WOS

Handle

NO MEU:

ORCID

207

TÃTULO: Optical doping and damage formation in AlN by Eu implantation Full Text
AUTORES: Lorenz, K ; Alves, E ; Gloux, F; Ruterana, P; Peres, M; Neves, AJ ; Monteiro, T ;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 107, NÚMERO: 2

INDEXADO EM:

Scopus

WOS

CrossRef: 27

NO MEU:

ORCID |

208

TÃTULO: RE Implantation and Annealing of III-Nitrides
AUTORES: Katharina Lorenz ; Eduardo Alves ; Florence Gloux; Pierre Ruterana;
PUBLICAÇÃO: 2010, FONTE: RARE EARTH DOPED III-NITRIDES FOR OPTOELECTRONIC AND SPINTRONIC APPLICATIONS, VOLUME: 124

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

209

TÃTULO: The Characterization of N Interstitials and Dangling Bond Point Defects on Ion-Implanted GaN Nanowires Studied by Photoluminescence and X-Ray Absorption Spectroscopy. Rapid Communications of the American Ceramic Society Full Text
AUTORES: Kuo Hao Lee; Jau Wern Chiou; Jin Ming Chen; Jyh Fu Lee; Alain Braud; Katharina Lorenz ; Eduardo Alves ; In Gann Chen;
PUBLICAÇÃO: 2010, FONTE: JOURNAL OF THE AMERICAN CERAMIC SOCIETY, VOLUME: 93, NÚMERO: 11

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |

210

TÃTULO: Thin film depth profiling using simultaneous particle backscattering and nuclear resonance profiling Full Text
AUTORES: Barradas, NP ; Mateus, R ; Fonseca, M. ; Miguel A. Reis ; Lorenz, K ; Vickridge, I;
PUBLICAÇÃO: 2010, FONTE: 19th International Conference on Ion Beam Analysis in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 268, NÚMERO: 11-12

INDEXADO EM:

Scopus

WOS

NO MEU:

ORCID |