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242

TÃTULO: Implantation of nanoporous GaN with eu ions Full Text
AUTORES: Magalhaes, S; Lorenz, K ; Peres, M; Monteiro, T ; Tripathy, S; Alves, E ;
PUBLICAÇÃO: 2007, FONTE: 15th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 257, NÚMERO: 1-2 SPEC. ISS.

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243

TÃTULO: Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range Full Text
AUTORES: Hums, C; Blaesing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2007, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 90, NÚMERO: 2

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244

TÃTULO: Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (vol 90, art no 022105, 2007) Full Text
AUTORES: Hums, C; Blaesing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K ; Alves, E;
PUBLICAÇÃO: 2007, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 91, NÚMERO: 13

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245

TÃTULO: Spectroscopic investigation of implanted epilayers of Tm3+ : GaN Full Text
AUTORES: Bodiou, L; Braud, A; Terpin, C; Doualan, JL; Moncorge, R; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2007, FONTE: International Conference on Luminescence and Optical Spectroscopy of Condensed Matter in JOURNAL OF LUMINESCENCE, VOLUME: 122, NÚMERO: 1-2

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246

TÃTULO: Structural and optical characterisation of Eu implanted AlxGa1-xN Full Text
AUTORES: Lorenz, K ; Alves, E ; Monteiro, T ; Cruz, A; Peres, M;
PUBLICAÇÃO: 2007, FONTE: 15th International Conference on Ion Beam Modification of Materials in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 257, NÚMERO: 1-2 SPEC. ISS.

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247

TÃTULO: Temperature dependence of the electric field gradient in GaN measured with the PAC-probe (181)Hf Full Text
AUTORES: Lorenz, K ; Geruschke, T; Alves, E ; Vianden, R;
PUBLICAÇÃO: 2007, FONTE: HYPERFINE INTERACTIONS, VOLUME: 177, NÚMERO: 1-3

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248

TÃTULO: A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
AUTORES: Nogales, E; Lorenz, K ; Wang, K; Roqan, IS; Martin, RW; O'Donnell, KP; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2006, FONTE: 2005 Materials Research Society Fall Meeting in Materials Research Society Symposium Proceedings, VOLUME: 892

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249

TÃTULO: Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state
AUTORES: Lorenz, K ; Franco, N; Alves, E ; Watson, IM; Martin, RW; O'Donnell, KP;
PUBLICAÇÃO: 2006, FONTE: PHYSICAL REVIEW LETTERS, VOLUME: 97, NÚMERO: 8

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250

TÃTULO: Behaviour of the AlN cap during GaN implantation of rare earths and annealing Full Text
AUTORES: Florence Gloux; Tomasz Wojtowicz; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Interfacial Processes and Properties of Advanced Materials held at the 2005 E-MRS Fall Meeting in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 203, NÚMERO: 9

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