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242

TÃTULO: Role of impurities and dislocations for the unintentional n-type conductivity in InN Full Text
AUTORES: Darakchieva, V; Barradas, NP ; Y Xie; Lorenz, K ; Alves, E ; Schubert, M; Persson, POA; Giuliani, F; Munnik, F; Hsiao, CL; Tu, LW; Schaff, WJ;
PUBLICAÇÃO: 2009, FONTE: 3rd South African Conference on Photonic Materials in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 22

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243

TÃTULO: Stable In-defect complexes in GaN and AlN Full Text
AUTORES: Schmitz, J; Niederhausen, J; Penner, J; Lorenz, K ; Alves, E ; Vianden, R;
PUBLICAÇÃO: 2009, FONTE: 25th International Conference on Defects in Semiconductors in PHYSICA B-CONDENSED MATTER, VOLUME: 404, NÚMERO: 23-24

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244

TÃTULO: Structural and optical characterization of Eu-implanted GaN Full Text
AUTORES: Lorenz, K ; Barradas, NP ; Alves, E ; Roqan, IS; Nogales, E; Martin, RW; O'Donnell, KP; Gloux, F; Ruterana, P;
PUBLICAÇÃO: 2009, FONTE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 42, NÚMERO: 16

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245

TÃTULO: A comparative investigation of the damage build-up in GaN and Si during rare earth ion implantation Full Text
AUTORES: Florence Gloux; Pierre Ruterana; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: 2nd Workshop on Impurity Based Electroluminescent Devices and Materials (IBEDM 2006) in PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 205, NÚMERO: 1

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246

TÃTULO: A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500 degrees C Full Text
AUTORES: Gloux, F; Ruterana, P; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: Meeting of the European-Materials-Research-Society in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 146, NÚMERO: 1-3

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247

TÃTULO: Defect studies on fast and thermal neutron irradiated GaN Full Text
AUTORES: Lorenz, K ; Marques, JG ; Franco, N; Alves, E ; Peres, M; Correia, MR ; Monteiro, T ;
PUBLICAÇÃO: 2008, FONTE: 14th International Conference on Radiation Effects in Insulators (REI-14) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 266, NÚMERO: 12-13

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248

TÃTULO: Luminescence spectroscopy of Eu-implanted zincblende GaN Full Text
AUTORES: Roqan, IS; O'Donnell, KP; Trager Cowan, C; Hourahine, B; Martin, RW; Lorenz, K ; Alves, E ; As, DJ; Panfilova, M; Watson, IM;
PUBLICAÇÃO: 2008, FONTE: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 245, NÚMERO: 1

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249

TÃTULO: Mechanisms of AlInN growth by MOVPE: modeling and experimental study Full Text
AUTORES: Yakovlev, EV; Lobanova, AV; Talalaev, RA; Watson, IM; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2008, FONTE: 7th International Conference on Nitride Semiconductors (ICNS-7) in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, VOLUME: 5, NÚMERO: 6

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250

TÃTULO: Optical energies of AlInN epilayers Full Text
AUTORES: Wang, K; Martin, RW; Amabile, D; Edwards, PR; Hernandez, S; Nogales, E; O'Donnell, KP; Lorenz, K ; Alves, E ; Matias, V; Vantomme, A; Wolverson, D; Watson, IM;
PUBLICAÇÃO: 2008, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 103, NÚMERO: 7

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