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272

TÃTULO: UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers Full Text
AUTORES: Pastor, D; Hernandez, S; Cusco, R; Artus, L; Martin, RW; O'Donnell, KP; Briot, O; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2006, FONTE: Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 40, NÚMERO: 4-6

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273

TÃTULO: Damage formation and annealing at low temperatures in ion implanted ZnO Full Text
AUTORES: Lorenz, K ; Alves, E ; Wendler, E; Bilani, O; Wesch, W; Hayes, M;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 19

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274

TÃTULO: Selectively excited photoluminescence from Eu-implanted GaN Full Text
AUTORES: Wang, K; Martin, RW; O'Donnell, KP; Katchkanov, V; Nogales, E; Lorenz, K ; Alves, E ; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2005, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 87, NÚMERO: 11

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275

TÃTULO: The atomic structure of defects formed during doping of GaN with rare earth ions Full Text
AUTORES: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLICAÇÃO: 2005, FONTE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, NÚMERO: 3

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276

TÃTULO: Amorphisation of GaN during processing with rare earth ion beams Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6

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277

TÃTULO: Anomalous temperature dependence of the EFG in AlN measured with the PAC-probes Hf-181 and In-111 Full Text
AUTORES: Lorenz, K ; Vianden, R;
PUBLICAÇÃO: 2004, FONTE: Joint Meeting of the 13th International Conference on Hyperfine Interactions/17th International Symposium on Nuclear Quadrupole Interactions (HFI/NQI 2004) in HYPERFINE INTERACTIONS, VOLUME: 158, NÚMERO: 1-4

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278

TÃTULO: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy Full Text
AUTORES: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6

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279

TÃTULO: Extended X-ray absorption fine structure studies of thulium doped GaN epilayers Full Text
AUTORES: Katchkanov, V; Mosselmans, JFW; Dalmasso, S; O'Donnell, KP; Hernandez, S; Wang, K; Martin, RW; Briot, O; Rousseau, N; Halambalakis, G; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: European Materials Research Society 2004, Symposium L. InN in Superlattices and Microstructures, VOLUME: 36, NÚMERO: 4-6

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