291
TÍTULO: The atomic structure of defects formed during doping of GaN with rare earth ions  Full Text
AUTORES: Wojtowicz, T; Ruterana, P; Lorenz, K ; Wahl, U ; Alves, E ; Ruffenach, S; Halambalakis, G; Briot, O;
PUBLICAÇÃO: 2005, FONTE: Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap II-VI Semiconductors held at the E-MRS 2004 Fall Meeting in E-MRS 2004 Fall Meeting Symposia C and F, VOLUME: 2, NÚMERO: 3
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292
TÍTULO: Amorphisation of GaN during processing with rare earth ion beams  Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Wojtowicz, T; Ruterana, P; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
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293
TÍTULO: Anomalous temperature dependence of the EFG in AlN measured with the PAC-probes Hf-181 and In-111  Full Text
AUTORES: Lorenz, K ; Vianden, R;
PUBLICAÇÃO: 2004, FONTE: Joint Meeting of the 13th International Conference on Hyperfine Interactions/17th International Symposium on Nuclear Quadrupole Interactions (HFI/NQI 2004) in HYPERFINE INTERACTIONS, VOLUME: 158, NÚMERO: 1-4
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294
TÍTULO: Characterisation of defects in rare earth implanted GaN by deep level transient spectroscopy  Full Text
AUTORES: Colder, A; Marie, P; Wojtowicz, T; Ruterana, P; Eimer, S; Mechin, L; Lorenz, K ; Wahl, U ; Alves, E ; Matias, V; Mamor, M;
PUBLICAÇÃO: 2004, FONTE: Meeting of the European-Materials-Research-Society in SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 36, NÚMERO: 4-6
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295
TÍTULO: Extended X-ray absorption fine structure studies of thulium doped GaN epilayers  Full Text
AUTORES: Katchkanov, V; Mosselmans, JFW; Dalmasso, S; O'Donnell, KP; Hernandez, S; Wang, K; Martin, RW; Briot, O; Rousseau, N; Halambalakis, G; Lorenz, K ; Alves, E ;
PUBLICAÇÃO: 2004, FONTE: European Materials Research Society 2004, Symposium L. InN in Superlattices and Microstructures, VOLUME: 36, NÚMERO: 4-6
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296
TÍTULO: High-temperature annealing and optical activation of Eu-implanted GaN  Full Text
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP; Ruffenach, S; Briot, O;
PUBLICAÇÃO: 2004, FONTE: APPLIED PHYSICS LETTERS, VOLUME: 85, NÚMERO: 14
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297
TÍTULO: Electron micro-probe analysis and cathodoluminescence spectroscopy of rare earth implanted GaN
AUTORES: Dalmasso, S; Martin, RW; Edwards, PR; Katchkanov, V; O'Donnell, KP; Lorenz, K ; Alves, E ; Wahl, U ; Pipeleers, B; Matias, V; Vantomme, A; Nakanishi, Y; Wakahara, A; Yoshida, A;
PUBLICAÇÃO: 2003, FONTE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
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298
TÍTULO: High temperature implantation of Tm in GaN
AUTORES: Lorenz, K ; Wahl, U ; Alves, E ; Dalmasso, S; Martin, RW; O'Donnell, KP;
PUBLICAÇÃO: 2003, FONTE: Symposium on GaN and Related Alloys held at the MRS Fall Meeting in GAN AND RELATED ALLOYS - 2003, VOLUME: 798
INDEXADO EM: Scopus WOS CrossRef: 6
299
TÍTULO: Implantation and annealing studies of Tm-implanted GaN  Full Text
AUTORES: Lorenz, K ; Alves, E ; Wahl, U ; Monteiro, T ; Dalmasso, S; Martin, RW; O'Donnell, KP; Vianden, R;
PUBLICAÇÃO: 2003, FONTE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, NÚMERO: 1-3
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300
TÍTULO: Lattice location and optical activation of rare earth implanted GaN  Full Text
AUTORES: Wahl, U ; Alves, E ; Lorenz, K ; Correia, JG ; Monteiro, T ; De Vries, B; Vantomme, A; Vianden, R;
PUBLICAÇÃO: 2003, FONTE: Meeting of the European-Materials-Research-Society (EMRS) in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 105, NÚMERO: 1-3
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