Maria Celeste da Silva do Carmo
AuthID: R-000-AQ5
51
TÃTULO: Light emitting porous silicon diode based on a silicon/porous silicon heterojunction Full Text
AUTORES: Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC ; Carmo, MC; Bisi, O;
PUBLICAÇÃO: 1999, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, NÚMERO: 11
AUTORES: Pavesi, L; Chierchia, R; Bellutti, P; Lui, A; Fuso, F; Labardi, M; Pardi, L; Sbrana, F; Allegrini, M; Trusso, S; Vasi, C; Ventura, PJ; Costa, LC ; Carmo, MC; Bisi, O;
PUBLICAÇÃO: 1999, FONTE: JOURNAL OF APPLIED PHYSICS, VOLUME: 86, NÚMERO: 11
52
TÃTULO: Porous silicon capping by CVD diamond Full Text
AUTORES: Fernandes, AJ; Ventura, PJ; Silva, RF ; Carmo, MC;
PUBLICAÇÃO: 1999, FONTE: 2nd European Conference on Hard Coatings (ETCHC-2)/3rd Iberian Vacuum Meeting (3rd RIVA) in VACUUM, VOLUME: 52, NÚMERO: 1-2
AUTORES: Fernandes, AJ; Ventura, PJ; Silva, RF ; Carmo, MC;
PUBLICAÇÃO: 1999, FONTE: 2nd European Conference on Hard Coatings (ETCHC-2)/3rd Iberian Vacuum Meeting (3rd RIVA) in VACUUM, VOLUME: 52, NÚMERO: 1-2
53
TÃTULO: Stress study of 1.5 mu m emission in Si:Er and GaAs:Er Full Text
AUTORES: Leitao, JP ; Carmo, MC; Henry, MO;
PUBLICAÇÃO: 1997, FONTE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
AUTORES: Leitao, JP ; Carmo, MC; Henry, MO;
PUBLICAÇÃO: 1997, FONTE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
INDEXADO EM: 
Scopus 
WOS
Scopus WOS54
TÃTULO: Isoelectronic impurity acting as a trap in CdTe Full Text
AUTORES: Soares, MJ ; Carmo, MC;
PUBLICAÇÃO: 1997, FONTE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
AUTORES: Soares, MJ ; Carmo, MC;
PUBLICAÇÃO: 1997, FONTE: 1996 International Conference on luminescence and Optical Spectroscopy of Condensed Matter (ICL 96) in JOURNAL OF LUMINESCENCE, VOLUME: 72-4
55
TÃTULO: Photoluminescence and structure properties from mu c-Si:H and mu c-Si:H-PS samples Full Text
AUTORES: Ventura, PJ; Cerqueira, MF ; Carmo, MC; Ferreira, JA;
PUBLICAÇÃO: 1997, FONTE: Symposium B: Thin Film Materials for Large Area Electronics at the European-Materials-Research-Society 1996 Spring Meeting in THIN SOLID FILMS, VOLUME: 296, NÚMERO: 1-2
AUTORES: Ventura, PJ; Cerqueira, MF ; Carmo, MC; Ferreira, JA;
PUBLICAÇÃO: 1997, FONTE: Symposium B: Thin Film Materials for Large Area Electronics at the European-Materials-Research-Society 1996 Spring Meeting in THIN SOLID FILMS, VOLUME: 296, NÚMERO: 1-2
56
TÃTULO: UNIAXIAL-STRESS AND ZEEMAN MEASUREMENTS ON THE 943 MEV LUMINESCENCE BAND IN SILICON
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
AUTORES: CARMO, MC; MCGUIGAN, KG; HENRY, MO; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1990, FONTE: SYMP AT THE 1989 FALL MEETING OF THE MATERIALS RESEARCH SOC : IMPURITIES,DEFECTS, AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES in IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, VOLUME: 163
INDEXADO EM: WOS
WOS57
TÃTULO: A UNIAXIAL-STRESS STUDY OF A COPPER-RELATED PHOTOLUMINESCENCE BAND IN SILICON Full Text
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
AUTORES: MCGUIGAN, KG; HENRY, MO; CARMO, MC; DAVIES, G; LIGHTOWLERS, EC;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS58
TÃTULO: LUMINESCENCE FROM TRANSITION-METAL CENTERS IN SILICON DOPED WITH SILVER AND NICKEL Full Text
AUTORES: NAZARE, MH; CARMO, MC; DUARTE, AJ;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
AUTORES: NAZARE, MH; CARMO, MC; DUARTE, AJ;
PUBLICAÇÃO: 1989, FONTE: SYMP AT THE 1989 SPRING MEETING OF THE EUROPEAN MATERIALS SOC : SCIENCE AND TECHNOLOGY OF DEFECTS IN SILICON in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, VOLUME: 4, NÚMERO: 1-4
INDEXADO EM: Scopus WOS
Scopus WOS