61
TITLE: Ion beam studies of MBE grown GaN films on (111) silicon substrates  Full Text
AUTHORS: Alves, E ; Barradas, NP ; Monteiro, T ; Correia, R; Kreissig, U;
PUBLISHED: 2002, SOURCE: 7th European Conference on Accelerators in Applied Research and Technology in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 188, ISSUE: 1-4
INDEXED IN: Scopus WOS CrossRef: 6
62
TITLE: Erratum: “Interpretation of double x-ray diffraction peaks from InGaN layers” [Appl. Phys. Lett. 79, 1432 (2001)]  Full Text
AUTHORS: Pereira, S; Correia, MR; Pereira, E; O’Donnell, KP; Alves, E; Sequeira, AD; Franco, N;
PUBLISHED: 2002, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 80, ISSUE: 2
INDEXED IN: CrossRef: 5
IN MY: ORCID
63
TITLE: Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study  Full Text
AUTHORS: Correia, R; Pereira, S ; Pereira, E; Alves, E ; Gleize, J; Frandon, J; Renucci, MA;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, VOLUME: 228, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 1
64
TITLE: Crystalline quality of InxGa1-xN samples assessed by SEM, Raman and PL
AUTHORS: Correia, R; Seitz, R; Gaspar, C; Monteiro, T; Pereira, E; Heuken, M; Schoen, O; Protzmann, H;
PUBLISHED: 1999, SOURCE: Conference on Microscopy of Semiconducting Materials in MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, ISSUE: 164
INDEXED IN: WOS
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