Peter Stallinga
AuthID: R-000-F4C
21
TITLE: Study of di-hydrogen-monovacancy defect in silicon
AUTHORS: Stallinga, P; Nielsen, BB;
PUBLISHED: 1997, SOURCE: Acta Physica Polonica A, VOLUME: 92, ISSUE: 5
AUTHORS: Stallinga, P; Nielsen, BB;
PUBLISHED: 1997, SOURCE: Acta Physica Polonica A, VOLUME: 92, ISSUE: 5
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ORCID22
TITLE: Identification of VH in silicon by EPR
AUTHORS: Johannesen, P; Byberg, JR; Bech Nielsen, B; Stallinga, P; Bonde Nielsen, K;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 258-263, ISSUE: PART 1
AUTHORS: Johannesen, P; Byberg, JR; Bech Nielsen, B; Stallinga, P; Bonde Nielsen, K;
PUBLISHED: 1997, SOURCE: Materials Science Forum, VOLUME: 258-263, ISSUE: PART 1
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ORCID23
TITLE: Trapping of molecular hydrogen in porous silicon and at Si/SiO2 interfaces and a possible reinterpretation of the Pb center
AUTHORS: Peter Stallinga; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1994, SOURCE: Proceedings of the 1993 Fall Meeting of the Materials Research Society in Materials Research Society Symposium Proceedings, VOLUME: 324
AUTHORS: Peter Stallinga; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1994, SOURCE: Proceedings of the 1993 Fall Meeting of the Materials Research Society in Materials Research Society Symposium Proceedings, VOLUME: 324
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ORCID24
TITLE: Electron paramagnetic resonance study of the NL51 spectrum in hydrogen-implanted silicon Full Text
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ; Yu V Gorelkinskii;
PUBLISHED: 1994, SOURCE: Solid State Communications, VOLUME: 90, ISSUE: 6
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ; Yu V Gorelkinskii;
PUBLISHED: 1994, SOURCE: Solid State Communications, VOLUME: 90, ISSUE: 6
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ORCID25
TITLE: EPR identification of hydrogen molecules in bulk silicon
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ; Yu V Gorelkinskii;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 2
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ; Yu V Gorelkinskii;
PUBLISHED: 1994, SOURCE: Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) in Materials Science Forum, VOLUME: 143-4, ISSUE: pt 2
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ORCID26
TITLE: Stallinga, Gregorkiewicz, and Ammerlaan reply [2]
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1994, SOURCE: Physical Review Letters, VOLUME: 73, ISSUE: 10
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1994, SOURCE: Physical Review Letters, VOLUME: 73, ISSUE: 10
27
TITLE: Electron paramagnetic resonance study of new centres in SiC Full Text
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1992, SOURCE: Materials Science and Engineering B, VOLUME: 11, ISSUE: 1-4
AUTHORS: Stallinga, P; Gregorkiewicz, T; Ammerlaan, CAJ;
PUBLISHED: 1992, SOURCE: Materials Science and Engineering B, VOLUME: 11, ISSUE: 1-4
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