Rui Manuel Coelho da Silva
AuthID: R-000-FX3
111
TÃTULO: Annealing behaviour of natural topaz implanted with W and Cr ions Full Text
AUTORES: Marques, C; Falcao, A; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 2000, FONTE: 10th International Conference on Radioation Effects in Insulators (REI-10) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 166
AUTORES: Marques, C; Falcao, A; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 2000, FONTE: 10th International Conference on Radioation Effects in Insulators (REI-10) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 166
112
TÃTULO: Characterisation of YBaCuO-PrBaCuO multilayers grown by pulsed injection MO-CVD Full Text
AUTORES: Galindo, V; Senateur, JP; Alves, E ; da Silva, RC; Silva, JA ; Cruz, MM ; Godinho, M ; Casaca, A ; Grégoire Bonfait ;
PUBLICAÇÃO: 1999, FONTE: International Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS-99) in JOURNAL OF LOW TEMPERATURE PHYSICS, VOLUME: 117, NÚMERO: 3-4
AUTORES: Galindo, V; Senateur, JP; Alves, E ; da Silva, RC; Silva, JA ; Cruz, MM ; Godinho, M ; Casaca, A ; Grégoire Bonfait ;
PUBLICAÇÃO: 1999, FONTE: International Conference on Physics and Chemistry of Molecular and Oxide Superconductors (MOS-99) in JOURNAL OF LOW TEMPERATURE PHYSICS, VOLUME: 117, NÚMERO: 3-4
113
TÃTULO: Electrical conductivity in ion implanted TiO2-single crystals
AUTORES: Fromknecht, R; Khubeis, I; Massing, S; Meyer, O; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
AUTORES: Fromknecht, R; Khubeis, I; Massing, S; Meyer, O; da Silva, RC; Alves, E ;
PUBLICAÇÃO: 1999, FONTE: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) in Proceedings of the International Conference on Ion Implantation Technology, VOLUME: 2
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ORCID114
TÃTULO: Lattice site location and annealing behavior of W implanted TiO2 Full Text
AUTORES: da Silva, RC; Alves, E ; Redondo, LM ; Fromknecht, R; Meyer, O;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
AUTORES: da Silva, RC; Alves, E ; Redondo, LM ; Fromknecht, R; Meyer, O;
PUBLICAÇÃO: 1998, FONTE: 13th International Conference on Ion Beam Analysis (IBA-13) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 136
115
TÃTULO: The modification of mechanical properties and adhesion of boron carbide sputtered films by ion implantation Full Text
AUTORES: Chiang, CI; Meyer, O; daSilva, RMC;
PUBLICAÇÃO: 1996, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 117, NÚMERO: 4
AUTORES: Chiang, CI; Meyer, O; daSilva, RMC;
PUBLICAÇÃO: 1996, FONTE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 117, NÚMERO: 4
116
TÃTULO: Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films
AUTORES: Dias, AG; Bustarret, E; da Silva, RC;
PUBLICAÇÃO: 1988, FONTE: The Physics and Technology of Amorphous SiO2
AUTORES: Dias, AG; Bustarret, E; da Silva, RC;
PUBLICAÇÃO: 1988, FONTE: The Physics and Technology of Amorphous SiO2
117
TÃTULO: A Channeling Study of the Superionic ß-PbF2
AUTORES: Silva, RC; Boerma, DO; Hartog, HW;
PUBLICAÇÃO: 1988, FONTE: Nuclear Physics Applications on Materials Science
AUTORES: Silva, RC; Boerma, DO; Hartog, HW;
PUBLICAÇÃO: 1988, FONTE: Nuclear Physics Applications on Materials Science
