141
TITLE: OPTOELECTRONIC PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED UNDER NEGATIVE SUBSTRATE BIAS  Full Text
AUTHORS: CABARROCAS, PRI; MORIN, P; CHU, V; CONDE, JP ; LIU, JZ; PARK, HR; WAGNER, S;
PUBLISHED: 1991, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 69, ISSUE: 5
INDEXED IN: Scopus WOS
IN MY: ORCID
142
TITLE: In situ ellipsometric study of amorphous silicon/amorphous silicon-carbon interfaces  Full Text
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 5
INDEXED IN: Scopus CrossRef
IN MY: ORCID
143
TITLE: An in situ ellipsometry study of amorphous silicon/amorphous germanium multilayers  Full Text
AUTHORS: Chu, V; Fang, M; Drevillon, B;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 1
INDEXED IN: Scopus CrossRef
IN MY: ORCID
144
TITLE: Growth-induced surface state in hydrogenated and fluorinated amorphous silicon  Full Text
AUTHORS: Maruyama, A; Liu, JZ; Chu, V; Shen, DS; Wagner, S;
PUBLISHED: 1991, SOURCE: Journal of Applied Physics, VOLUME: 69, ISSUE: 4
INDEXED IN: Scopus CrossRef
IN MY: ORCID
145
TITLE: Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias  Full Text
AUTHORS: Roca i Cabarrocas, P; Morin, P; Chu, V; Conde, JP; Liu, JZ; Park, HR; Wagner, S;
PUBLISHED: 1991, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 69, ISSUE: 5
INDEXED IN: CrossRef
IN MY: ORCID
146
TITLE: Improving tin oxide/hydrogenated amorphous silicon interfaces for solar cell applications  Full Text
AUTHORS: Roca i Cabarrocas, P; Ramprashad, S; Liu, JZ; Chu, V; Maruyama, A; Wagner, S;
PUBLISHED: 1990, SOURCE: Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) in Conference Record of the IEEE Photovoltaic Specialists Conference, VOLUME: 2
INDEXED IN: Scopus
IN MY: ORCID
147
TITLE: A-SI-H,F-REVERSIBLE-A-SI,GE-H,F GRADED-BANDGAP STRUCTURES
AUTHORS: CONDE, JP; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: INTERNATIONAL TOPICAL CONF ON HYDROGENATED AMORPHOUS SILICON DEVICES AND TECHNOLOGY in IEEE TRANSACTIONS ON ELECTRON DEVICES, VOLUME: 36, ISSUE: 12
INDEXED IN: Scopus WOS
IN MY: ORCID
148
TITLE: BREAKING THE ISOTROPY OF AMORPHOUS SILICON-GERMANIUM ALLOYS - GRADED-BANDGAP AND SAWTOOTH SUPERLATTICE STRUCTURES  Full Text
AUTHORS: CONDE, JP ; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: 13TH INTERNATIONAL CONF ON AMORPHOUS AND LIQUID SEMICONDUCTORS in JOURNAL OF NON-CRYSTALLINE SOLIDS, VOLUME: 114, ISSUE: Pt2
INDEXED IN: Scopus WOS
IN MY: ORCID
149
TITLE: ELECTRON-TRANSPORT IN A-SI-H,F/A-SI,GE-H,F SUPERLATTICES  Full Text
AUTHORS: CONDE, JP ; SHEN, DS; CHU, V; WAGNER, S;
PUBLISHED: 1989, SOURCE: SUPERLATTICES AND MICROSTRUCTURES, VOLUME: 6, ISSUE: 1
INDEXED IN: Scopus WOS
IN MY: ORCID
150
TITLE: PHOTOCURRENT COLLECTION IN A SCHOTTKY-BARRIER ON AN AMORPHOUS SILICON-GERMANIUM ALLOY STRUCTURE WITH 1.23 EV OPTICAL GAP  Full Text
AUTHORS: CHU, V; CONDE, JP ; SHEN, DS; WAGNER, S;
PUBLISHED: 1989, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 55, ISSUE: 3
INDEXED IN: Scopus WOS
IN MY: ORCID
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