Alexandra Inês Sarabando de Carvalho
AuthID: R-000-K6Q
61
TITLE: Studies of the VO centre in Ge using first principles cluster calculations Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Shaw, M; Torres, VJB ; Oeberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: Symposium on Germanium-Based Semiconductors from Materials to Devices held at the 2006 EMRS Spring Meeting in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, VOLUME: 9, ISSUE: 4-5
62
TITLE: First-principles investigation of a bistable boron-oxygen interstitial pair in Si
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
AUTHORS: Carvalho, A; Jones, R; Sanati, M; Estreicher, SK; Coutinho, J ; Briddon, PR;
PUBLISHED: 2006, SOURCE: PHYSICAL REVIEW B, VOLUME: 73, ISSUE: 24
63
TITLE: Calculation of deep carrier traps in a divacancy in germanium crystals Full Text
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
AUTHORS: Coutinho, J ; Torres, VJB ; Jones, R; Carvalho, A; Oberg, S; Briddon, PR;
PUBLISHED: 2006, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 88, ISSUE: 9
64
TITLE: Density-functional study of small interstitial clusters in Si: Comparison with experiments
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: PHYSICAL REVIEW B, VOLUME: 72, ISSUE: 15
65
TITLE: Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si Full Text
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Briddon, PR;
PUBLISHED: 2005, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 17, ISSUE: 17
66
TITLE: Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Carvalho, A; Jones, R; Coutinho, J ; Torres, VJB ; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: 
Scopus 
WOS
Scopus WOS67
TITLE: Theoretical investigations of the energy levels of defects in germanium
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
AUTHORS: Jones, R; Carvalho, A; Coutinho, J ; Torres, VJB ; Oberg, S; Briddon, PR;
PUBLISHED: 2005, SOURCE: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005) in GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, VOLUME: 108-109
INDEXED IN: Scopus WOS
Scopus WOS