Jennifer Cláudia Passos Teixeira
AuthID: R-001-XG0
21
TITLE: CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces Full Text
AUTHORS: Henrique Limborco; Pedro M P Salome; Rodrigo Ribeiro Andrade; Jennifer P Teixeira; Nicoleta Nicoara; Kamal Abderrafi; Joaquim P Leitao; Juan C Gonzalez; Sascha Sadewasser;
PUBLISHED: 2019, SOURCE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 10
AUTHORS: Henrique Limborco; Pedro M P Salome; Rodrigo Ribeiro Andrade; Jennifer P Teixeira; Nicoleta Nicoara; Kamal Abderrafi; Joaquim P Leitao; Juan C Gonzalez; Sascha Sadewasser;
PUBLISHED: 2019, SOURCE: BEILSTEIN JOURNAL OF NANOTECHNOLOGY, VOLUME: 10
INDEXED IN: 
WOS
WOS22
TITLE: Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors Full Text
AUTHORS: Fernandes, PA; Shongalova, A; da Cunha, AF; Teixeira, JP; Leitao, JP; Cunha, JMV; Bose, S; Salome, PMP; Correia, MR;
PUBLISHED: 2019, SOURCE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 797
AUTHORS: Fernandes, PA; Shongalova, A; da Cunha, AF; Teixeira, JP; Leitao, JP; Cunha, JMV; Bose, S; Salome, PMP; Correia, MR;
PUBLISHED: 2019, SOURCE: JOURNAL OF ALLOYS AND COMPOUNDS, VOLUME: 797
INDEXED IN: 
Scopus WOS
Scopus WOS23
TITLE: CuInSe2 quantum dots grown by molecular beam epitaxy on amorphous SiO2 surfaces
AUTHORS: Limborço, H; Salomé, PMP; Ribeiro Andrade, R; Teixeira, JP; Nicoara, N; Abderrafi, K; Leitão, JP; Gonzalez, JC; Sadewasser, S;
PUBLISHED: 2019, SOURCE: Beilstein Journal of Nanotechnology, VOLUME: 10
AUTHORS: Limborço, H; Salomé, PMP; Ribeiro Andrade, R; Teixeira, JP; Nicoara, N; Abderrafi, K; Leitão, JP; Gonzalez, JC; Sadewasser, S;
PUBLISHED: 2019, SOURCE: Beilstein Journal of Nanotechnology, VOLUME: 10
INDEXED IN: Scopus
Scopus24
TITLE: Passivation of Interfaces in Thin Film Solar Cells: Understanding the Effects of a Nanostructured Rear Point Contact Layer
AUTHORS: Pedro M P Salome; Bart Vermang; Rodrigo Ribeiro Andrade; Jennifer P Teixeira; Jose M V Cunha; Manuel J Mendes; Sirazul Haque; Jerome Borme; Hugo Aguas; Elvira Fortunato; Rodrigo Martins; Juan C Gonzalez; Joaquim P Leitao; Paulo A Fernandes; Marika Edoff; Sascha Sadewasser;
PUBLISHED: 2018, SOURCE: ADVANCED MATERIALS INTERFACES, VOLUME: 5, ISSUE: 2
AUTHORS: Pedro M P Salome; Bart Vermang; Rodrigo Ribeiro Andrade; Jennifer P Teixeira; Jose M V Cunha; Manuel J Mendes; Sirazul Haque; Jerome Borme; Hugo Aguas; Elvira Fortunato; Rodrigo Martins; Juan C Gonzalez; Joaquim P Leitao; Paulo A Fernandes; Marika Edoff; Sascha Sadewasser;
PUBLISHED: 2018, SOURCE: ADVANCED MATERIALS INTERFACES, VOLUME: 5, ISSUE: 2
INDEXED IN: WOS
WOS25
TITLE: Slow-muon study of quaternary solar-cell materials: Single layers and p-n junctions
AUTHORS: Alberto, HV; Vilao, RC; Vieira, RBL; Gil, JM; Weidinger, A; Sousa, MG; Teixeira, JP; da Cunha, AF; Leitao, JP; Salome, PMP; Fernandes, PA; Toerndahl, T; Prokscha, T; Suter, A; Salman, Z;
PUBLISHED: 2018, SOURCE: PHYSICAL REVIEW MATERIALS, VOLUME: 2, ISSUE: 2
AUTHORS: Alberto, HV; Vilao, RC; Vieira, RBL; Gil, JM; Weidinger, A; Sousa, MG; Teixeira, JP; da Cunha, AF; Leitao, JP; Salome, PMP; Fernandes, PA; Toerndahl, T; Prokscha, T; Suter, A; Salman, Z;
PUBLISHED: 2018, SOURCE: PHYSICAL REVIEW MATERIALS, VOLUME: 2, ISSUE: 2
INDEXED IN: WOS
WOS26
TITLE: Fluctuating potentials in GaAs:Si nanowires: critical reduction of the influence of polytypism on the electronic structure Full Text
AUTHORS: Ben Sedrine, N; Ribeiro Andrade, R; Gustafsson, A; Soares, MR; Bourgard, J; Teixeira, JP; Salome, PMP; Correia, MR; Moreira, MVB; De Oliveira, AG; Gonzalez, JC; Leitao, JP;
PUBLISHED: 2018, SOURCE: NANOSCALE, VOLUME: 10, ISSUE: 8
AUTHORS: Ben Sedrine, N; Ribeiro Andrade, R; Gustafsson, A; Soares, MR; Bourgard, J; Teixeira, JP; Salome, PMP; Correia, MR; Moreira, MVB; De Oliveira, AG; Gonzalez, JC; Leitao, JP;
PUBLISHED: 2018, SOURCE: NANOSCALE, VOLUME: 10, ISSUE: 8
INDEXED IN: Scopus WOS
Scopus WOS27
TITLE: Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors Full Text
AUTHORS: Shongalova, A; Correia, MR; Teixeira, JP; Leitao, JP; Gonzalez, JC; Ranjbar, S; Garud, S; Vermang, B; Cunha, JMV; Salome, PMP; Fernandes, PA;
PUBLISHED: 2018, SOURCE: SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 187
AUTHORS: Shongalova, A; Correia, MR; Teixeira, JP; Leitao, JP; Gonzalez, JC; Ranjbar, S; Garud, S; Vermang, B; Cunha, JMV; Salome, PMP; Fernandes, PA;
PUBLISHED: 2018, SOURCE: SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 187
INDEXED IN: Scopus WOS
Scopus WOS28
TITLE: Insulator Materials for Interface Passivation of Cu(In,Ga)Se-2 Thin Films Full Text
AUTHORS: Cunha, JMV; Fernandes, PA; Hultqvist, A; Teixeira, JP; Bose, S; Vermang, B; Garud, S; Buldu, D; Gaspar, J; Edoff, M; Leitao, JP; Salome, PMP;
PUBLISHED: 2018, SOURCE: IEEE JOURNAL OF PHOTOVOLTAICS, VOLUME: 8, ISSUE: 5
AUTHORS: Cunha, JMV; Fernandes, PA; Hultqvist, A; Teixeira, JP; Bose, S; Vermang, B; Garud, S; Buldu, D; Gaspar, J; Edoff, M; Leitao, JP; Salome, PMP;
PUBLISHED: 2018, SOURCE: IEEE JOURNAL OF PHOTOVOLTAICS, VOLUME: 8, ISSUE: 5
INDEXED IN: WOS
WOS29
TITLE: CdS and Zn1−xSnxOy buffer layers for CIGS solar cells
AUTHORS: Salomé, PMP; Keller, J; Törndahl, T; Teixeira, JP; Nicoara, N; Andrade, RR; Stroppa, DG; González, JC; Edoff, M; Leitão, JP; Sadewasser, S;
PUBLISHED: 2017, SOURCE: Solar Energy Materials and Solar Cells, VOLUME: 159
AUTHORS: Salomé, PMP; Keller, J; Törndahl, T; Teixeira, JP; Nicoara, N; Andrade, RR; Stroppa, DG; González, JC; Edoff, M; Leitão, JP; Sadewasser, S;
PUBLISHED: 2017, SOURCE: Solar Energy Materials and Solar Cells, VOLUME: 159
30
TITLE: CdS and Zn1-xSnxOy buffer layers for CIGS solar cells
AUTHORS: Salome, PMP; Keller, J; Torndahl, T; Teixeira, JP; Nicoara, N; Ribeiro R Andrade; Stroppa, DG; Gonzalez, JC; Edoff, M; Leitao, JP; Sadewasser, S;
PUBLISHED: 2017, SOURCE: SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 159
AUTHORS: Salome, PMP; Keller, J; Torndahl, T; Teixeira, JP; Nicoara, N; Ribeiro R Andrade; Stroppa, DG; Gonzalez, JC; Edoff, M; Leitao, JP; Sadewasser, S;
PUBLISHED: 2017, SOURCE: SOLAR ENERGY MATERIALS AND SOLAR CELLS, VOLUME: 159
INDEXED IN: WOS
WOS