João Guilherme Martins Correia
AuthID: R-000-6ZY
11
TÃTULO: Hyperfine interactions in MnAs studied by perturbed angular correlations of gamma-rays using the probe Br-77 -> Se-77 and first-principles calculations for MnAs and other Mn pnictides
AUTORES: Goncalves, JN ; Amaral, VS ; Correia, JG; Lopes, AML ;
PUBLICAÇÃO: 2011, FONTE: PHYSICAL REVIEW B, VOLUME: 83, NÚMERO: 10
AUTORES: Goncalves, JN ; Amaral, VS ; Correia, JG; Lopes, AML ;
PUBLICAÇÃO: 2011, FONTE: PHYSICAL REVIEW B, VOLUME: 83, NÚMERO: 10
INDEXADO EM: 
Scopus 
WOS
Scopus WOS NO MEU: ResearcherID
ResearcherID12
TÃTULO: Local O-delta probing in the high-T-c superconductor HgBa2CuO4+delta
AUTORES: Correia, JG; Araujo, JP ; Loureiro, SM; Toulemonde, P; Le Floch, S; Bordet, P; Capponi, JJ; Gatt, R; Troger, W; Ctortecka, B; Butz, T; Haas, H; Marques, JG ; Soares, JC;
PUBLICAÇÃO: 2000, FONTE: PHYSICAL REVIEW B, VOLUME: 61, NÚMERO: 17
AUTORES: Correia, JG; Araujo, JP ; Loureiro, SM; Toulemonde, P; Le Floch, S; Bordet, P; Capponi, JJ; Gatt, R; Troger, W; Ctortecka, B; Butz, T; Haas, H; Marques, JG ; Soares, JC;
PUBLICAÇÃO: 2000, FONTE: PHYSICAL REVIEW B, VOLUME: 61, NÚMERO: 17
NO MEU: ResearcherID
ResearcherID13
TÃTULO: High-T-c superconductors studies with radioactive ion beams at isolde
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
AUTORES: Correia, JG; Alves, E ; Amaral, VS; Araujo, JP ; Bordet, P; Butz, T; Capponi, JJ; Ctortecka, B; Le Floch, S; Galindo, V; Gatt, R; Langouche, G; Loureiro, SM; Lourenco, AA; Marques, JG; Melo, AA; von Papen, T; Ramos, AR ; Senateur, JP; da Silva, MF; ...Mais
PUBLICAÇÃO: 1999, FONTE: Workshop on Ion and Slow Positron Beam Utilisation in PROCEEDINGS OF THE WORKSHOP ON ION AND SLOW POSITRON BEAM UTILISATION
INDEXADO EM: WOS
WOS14
TÃTULO: The influence of oxygen on the lattice sites of rare earths in silicon
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLICAÇÃO: 1999, FONTE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77
AUTORES: Wahl, U; Vantomme, A; Langouche, G; Correia, JG;
PUBLICAÇÃO: 1999, FONTE: Symposium B on Light Emission from Silicon - Progress Towards Si-based Optoelectronics at the Spring Meeting of the European-Materials-Research-Society in LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, VOLUME: 77
INDEXADO EM: WOS
WOS15
TÃTULO: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
INDEXADO EM: WOS
WOS NO MEU: ResearcherID
ResearcherID