José Joaquim Gonçalves Marques
AuthID: R-000-8DT
41
TÃTULO: Direct evidence for stability of tetrahedral interstitial Er in Si up to 900 degrees C
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
AUTORES: Wahl, U; Correia, JG; Langouche, G; Marques, JG;
PUBLICAÇÃO: 1997, FONTE: 19th International Conference on Defects in Semiconductors (ICDS-19) in DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, VOLUME: 258-2
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ResearcherID42
TÃTULO: The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing (Reprinted from Nuclear Instruments and Methods in Physics B, vol 106, pg 602-605, 1995)
AUTORES: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
AUTORES: Marques, JG; Melo, AA; Soares, JC; Alves, E ; daSilva, MF; Freitag, K;
PUBLICAÇÃO: 1996, FONTE: 9th International Conference on Ion Beam Modification of Materials (IBMM 95) in ION BEAM MODIFICATION OF MATERIALS
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