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TITLE: Structures and Properties of the Self-Assembling Diphenylalanine Peptide Nanotubes Containing Water Molecules: Modeling and Data Analysis
AUTHORS: Vladimir Bystrov; Jose Coutinho; Pavel Zelenovskiy; Alla Nuraeva; Svitlana Kopyl; Olga Zhulyabina; Vsevolod Tverdislov;
PUBLISHED: 2020, SOURCE: NANOMATERIALS, VOLUME: 10, ISSUE: 10
INDEXED IN: Scopus WOS
12
TITLE: E-SiCure Collaboration Project: Silicon Carbide Material Studies and Detector Prototype Testing at the JSI TRIGA Reactor
AUTHORS: Radulovic, V; Ambrozic, K; Snoj, L; Capan, I; Brodar, T; Eres, Z; Pastuovic, Z; Sarbutt, A; Ohshima, T; Yamazaki, Y; Coutinho, J;
PUBLISHED: 2020, SOURCE: 6th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA) in ADVANCEMENTS IN NUCLEAR INSTRUMENTATION MEASUREMENT METHODS AND THEIR APPLICATIONS (ANIMMA 2019), VOLUME: 225
INDEXED IN: WOS
13
TITLE: Sub-Band Gap Absorption Mechanisms Involving Oxygen Vacancies in Hydroxyapatite
AUTHORS: Vladimir S Bystrov; Leon A Avakyan; Ekaterina V Paramonova; Jose Coutinho;
PUBLISHED: 2019, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 123, ISSUE: 8
INDEXED IN: WOS
14
TITLE: Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells  Full Text
AUTHORS: Michelle Vaqueiro Contreras; Vladimir P Markevich; Jose Coutinho; Paulo Santos; Iain F Crowe; Matthew P Halsall; Ian Hawkins; Stanislau B Lastovskii; Leonid I Murin; Anthony R Peaker;
PUBLISHED: 2019, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 125, ISSUE: 18
INDEXED IN: Scopus WOS
15
TITLE: Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment
AUTHORS: Bathen, ME; Coutinho, J; Ayedh, HM; Ul Hassan, J; Farkas, I; Oberg, S; Frodason, YK; Svensson, BG; Vines, L;
PUBLISHED: 2019, SOURCE: PHYSICAL REVIEW B, VOLUME: 100, ISSUE: 1
INDEXED IN: Scopus WOS
17
TITLE: Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors  Full Text
AUTHORS: Peaker, AR; Markevich, VP; Coutinho, J;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
INDEXED IN: Scopus WOS
18
TITLE: Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study  Full Text
AUTHORS: Ivana Capan; Tomislav Brodar; Zeljko Pastuovic; Rainer Siegele; Takeshi Ohshima; Shin ichiro Sato; Takahiro Makino; Luka Snoj; Vladimir Radulovic; Jose Coutinho; Vitor J B Torres; Kamel Demmouche;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
INDEXED IN: Scopus WOS
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TITLE: Lifetime degradation of n-type Czochralski silicon after hydrogenation  Full Text
AUTHORS: Vaqueiro Contreras, M; Markevich, VP; Mullins, J; Halsall, MP; Murin, LI; Falster, R; Binns, J; Coutinho, J; Peaker, AR;
PUBLISHED: 2018, SOURCE: 29th International Conference on Defects in Semiconductors (ICDS) in JOURNAL OF APPLIED PHYSICS, VOLUME: 123, ISSUE: 16
INDEXED IN: Scopus WOS
20
TITLE: Optoelectronics and defect levels in hydroxyapatite by first-principles  Full Text
AUTHORS: Leon A Avakyan; Ekaterina V Paramonova; Jose Coutinho; Sven Oberg; Vladimir S Bystrov; Lusegen A Bugaev;
PUBLISHED: 2018, SOURCE: JOURNAL OF CHEMICAL PHYSICS, VOLUME: 148, ISSUE: 15
INDEXED IN: Scopus WOS
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