Katharina Lorenz
AuthID: R-000-90E
51
TITLE: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications Full Text
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
52
TITLE: Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the D-5(0) to F-7(1) transition Full Text
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
AUTHORS: O'Donnell, KP; Edwards, PR; Yamaga, M; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2016, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 108, ISSUE: 2
53
TITLE: Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films Full Text
AUTHORS: Flemban, TH; Sequeira, MC; Zhang, Z; Venkatesh, S; Alves, E; Lorenz, K; Roqan, IS;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 6
AUTHORS: Flemban, TH; Sequeira, MC; Zhang, Z; Venkatesh, S; Alves, E; Lorenz, K; Roqan, IS;
PUBLISHED: 2016, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 119, ISSUE: 6
54
TITLE: Effect of AlN content on the lattice site location of terbium ions in AlxGa1-xN compounds Full Text
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
AUTHORS: Fialho, M; Rodrigues, J; Magalhaes, S; Correia, MR; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 31, ISSUE: 3
55
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N Full Text
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
AUTHORS: Magalhaes, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 49, ISSUE: 13
INDEXED IN: 
WOS
WOS56
TITLE: Quantitative x-ray diffraction analysis of bimodal damage distributions in Tm implanted Al0.15Ga0.85N
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
AUTHORS: Magalha∼es, S; Fialho, M; Peres, M; Lorenz, K; Alves, E;
PUBLISHED: 2016, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 49, ISSUE: 13
INDEXED IN: 
Scopus
Scopus57
TITLE: Mechanisms of Implantation Damage Formation in AlxGa1-xN Compounds
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
AUTHORS: Nd. N Faye; Wendler, E; Felizardo, M ; Magalhaes, S; Alves, E; Brunner, F; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: JOURNAL OF PHYSICAL CHEMISTRY C, VOLUME: 120, ISSUE: 13
58
TITLE: Analysis of the Tb3+ recombination in ion implanted AlxGa1-xN (0 <= x <= 1) layers Full Text
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
AUTHORS: Rodrigues, J; Fialho, M; Magalhaes, S; Correia, MR; Rino, L; Alves, E; Neves, AJ; Lorenz, K; Monteiro, T;
PUBLISHED: 2016, SOURCE: JOURNAL OF LUMINESCENCE, VOLUME: 178
59
TITLE: Direct Measurement of Polarization-Induced Fields in GaN/AlN by Nano-Beam Electron Diffraction Full Text
AUTHORS: Daniel Carvalho; Knut Mueller Caspary; Marco Schowalter; Tim Grieb; Thorsten Mehrtens; Andreas Rosenauer; Teresa Ben; Rafael Garcia; Andres Redondo Cubero; Katharina Lorenz; Bruno Daudin; Francisco M Morales;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
AUTHORS: Daniel Carvalho; Knut Mueller Caspary; Marco Schowalter; Tim Grieb; Thorsten Mehrtens; Andreas Rosenauer; Teresa Ben; Rafael Garcia; Andres Redondo Cubero; Katharina Lorenz; Bruno Daudin; Francisco M Morales;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
60
TITLE: Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices Full Text
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
AUTHORS: Nd. N Faye; Fialho, M; Magalhaes, S; Alves, E; Ben Sedrine, N; Rodrigues, J; Correia, MR; Monteiro, T; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K;
PUBLISHED: 2016, SOURCE: 18th International Conference on Radiation Effects in Insulators (REI) in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 379
