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7Th International Symposium on Atomic Level Characterizations for New Materials and Devices, Date: DEC 06-11, 2009, Location: Maui, HI, Patrocinadores: Japanese Soc Promot Sci, 141st Comm Microbeam Anal

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DOI: 10.1002/sia.3614

SCOPUS: 2-s2.0-78149434154

Wos: WOS:000282668800009

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ISSN: 0142-2421

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Effect of Annealing on Aln/Gan Quantum Dot Heterostructures: Advanced Ion Beam Characterization and X-Ray Study of Low-Dimensional Structures

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Effect of Annealing on Aln/Gan Quantum Dot Heterostructures: Advanced Ion Beam Characterization and X-Ray Study of Low-Dimensional Structures

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