Publicações

High Mobility and Low Threshold Voltage Transparent Thin Film Transistors Based on Amorphous Indium Zinc Oxide Semiconductors

AuthID
P-004-1DF

Author(s)

Fortunato, E

Tipo de Documento

Article

Year published

2008

Publicado

in SOLID-STATE ELECTRONICS, ISSN: 0038-1101

Volume: 52, Número: 3, Páginas: 443-448 (6)

Conference

3Rd International Tft Conference (Itc 07), Date: JAN 25-26, 2007, Location: Rome, ITALY, Host: CNR Headquarters

Indexing

Wos^®

Scopus^®

Crossref^®

Google Scholar^®

Publication Identifiers

DOI: 10.1016/j.sse.2007.10.032

SCOPUS: 2-s2.0-39049125192

Wos: WOS:000255529100020

Source Identifiers

ISSN: 0038-1101

Export Publication Metadata

Lista Marked

Adicionar à lista Marked

Citações

Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

CORE Conference

No information about CORE Rank

During the preprocessing phase, only publications of type 'Proceedings Paper' or 'Proceedings' are automatically processed to identify their CORE Rank.

TIP: If your publication's CORE Rank is missing, you can contact with your institutional manager to have the correct ranking manually added to the record.

Journal Factors

Oops! It looks like you don't have access to this content.

This section is restricted to uses with b-on access.

Full Text

Full Text @ sfx.b-on.pt

High Mobility and Low Threshold Voltage Transparent Thin Film Transistors Based on Amorphous Indium Zinc Oxide Semiconductors

Links Úteis

Ajuda

Autenticação Federada (Clique na imagem)

High Mobility and Low Threshold Voltage Transparent Thin Film Transistors Based on Amorphous Indium Zinc Oxide Semiconductors

Links Úteis

Ajuda