Fatigue of Ferroelectric Field Effect Transistor: Mechanisms and Optimization Strategies

AuthID
 P-019-2FV
13
Author(s)
Song, Y
·
Jiang, PF
·
Xu, P
·
Peng, XY
·
Wei, QQ
·
Yan, QY
·
Wei, W
·
Wang, Y
·
Long, X
·
Gong, TC
·
Yang, Y
·
Luo, Q
Tipo de Documento
Review
Year published
2025
Publicado
in JOURNAL OF SEMICONDUCTORS, ISSN: 1674-4926
Volume: 46, Número: 6, Páginas: 061302 (13)
Indexing
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Scopus®
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Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-105009618615
Wos: WOS:001507872600001
Source Identifiers
ISSN: 1674-4926
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