On Reliable Modeling of Substrate/Buffer Loading Effects in a Gallium Nitride High-Electron-Mobility Transistor on Silicon Substrate

AuthID
 P-01A-S70
2
Author(s)
Jarndal, A
·
Tipo de Documento
Article
Year published
2020
Publicado
in Journal of Computational Electronics, ISSN: 1569-8025
Volume: 20, Número: 1, Páginas: 503-514
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ISSN: 1569-8025
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